Cu–Ti surface-layer mixing by ion-beam modification techniques

Laverentiev, Vasily; Adeev, V. M.; Kоtkо, А. V.; Tolopa, A.M.

doi:10.1016/s0257-8972(98)00510-6

Cited by 6 publications

(3 citation statements)

References 20 publications

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“…Ti is resistant to external influences and has good adhesive and gettering properties [2]. In the past two decades, Cu/Ti thin film system due to its potential applications has been studied, such as the kinetics of solid-phase interactions [3,4], microstructure [5], metallurgical [6], the formation of interface layers [7,8], thermal oxidation [9], mechanical behavior [5,6,10], and electrical properties [11]. In some Cu film systems [12][13][14][15][16][17][18], remarkable agglomeration occurs at the interfaces on annealing.…”

Section: Introductionmentioning

confidence: 99%

Agglomeration and Dendritic Growth of Cu/Ti/Si Thin Film

Lin

Jing

Yang

et al. 2014

Journal of Nanomaterials

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Agglomeration and the transformation from random fractal to dendritic growth have been observed during Cu/Ti/Si thin film annealing. The experimental results show that the annealing temperature, film thickness, and substrate thickness influenced the agglomeration and dendritic growth. Multifractal spectrum is used to characterize the surface morphology quantificationally. The shapes of the multifractal spectra are hook-like to the left. Value of Δ increases with the annealing temperature rising, and Δ increases from 500 ∘ C to 700 ∘ C but reduces from 700 ∘ C to 800 ∘ C. The dendritic patterns with symmetrical branches are generated in the surfaces when the thin films were annealed at 800 ∘ C.

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Section: Introductionmentioning

confidence: 99%

Agglomeration and Dendritic Growth of Cu/Ti/Si Thin Film

Lin

Jing

Yang

et al. 2014

Journal of Nanomaterials

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“…[3,4] Cu/Ti films and alloys have been widely studied because of the excellent electrical and metallurgical properties. [5][6][7][8][9][10][11] The performance of nanostructured devices with morphological features at nanoscale strongly related to the surface roughness. For example, surface roughness of Cu interconnects results the increase of resistivity up to 50%.…”

Section: Introductionmentioning

confidence: 99%

“…Ti is easy to react with SiO 2 to produce thin barrier metal layers by self‐formation in SiO 2 ‐based low‐k interlayers . Cu/Ti films and alloys have been widely studied because of the excellent electrical and metallurgical properties . The performance of nanostructured devices with morphological features at nano‐scale strongly related to the surface roughness.…”

Section: Introductionmentioning

confidence: 99%

Multifractal analysis for Cu/Ti bilayer thin films

Lin

Yang

Wang

et al. 2013

Surface & Interface Analysis

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a Two bilayer thin films with different stacking sequences, Cu/Ti/Si and Ti/Cu/Si, were deposited by DC magnetron sputtering technique. X-ray diffraction technique was used to measure the crystallization structures, and scanning electron microscopy and atomic force microscopy were used to measured surface morphology. The multifractal spectra f(a)-a was used to characterize the surface morphology. The result of |q| max ≤ 53 is obtained by multifractal analysis. The shape of the multifractal spectra f(a) À a is hook-like for Cu/Ti/Si and bell jar-like for Ti/Cu/Si. The spectrum width Δa = a max À a min and Δf(=f(a min ) À f(a max )) of the multifractal spectra is able to quantitatively analyze the growth and surface roughness of the Cu/Ti bilayer thin films. The surface of Ti/Cu/Si thin film is more uniform and smoother than the film of Cu/Ti/Si.

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