Cu3N thin film synthesized by selective in situ substrate heating during high power impulse magnetron sputtering for augmenting UV photodetection

Highly Stable and Enhanced Performance of p–i–n Perovskite Solar Cells via Cuprous Oxide Hole-Transport Layers

“…In addition, through XRD analysis (Figure S2), the crystallinity of the Cu 2 O improved from the DCMS to superimposed HiPIMS deposition techniques. According to previous studies, an increase in film's crystallinity helps to increase the charge-carrier mobility (µ) [50]. In addition, varying the exposure times of the sputtering and plasma treatments impacted the optoelectronic properties of the thin films.…”

Construction of nanorod-shaped TiO2/Cu3N p–n heterojunction for efficient visible-light hydrogen evolution

“…[17][18][19] Cu 3 N has a typical anti-ReO 3 crystal structure 20 and has a tunable narrow band gap of 0.2-2.0 eV. 17,20,21 Furthermore, Cu 3 N has been reported to be applied in selectively converting methanol to formate, 22 degradation of methyl orange 20 and UV photodetection 23 due to its exceptional optical and electrical properties. Considering the advantages of Cu 3 N in tuning the band gap and semiconductor type, it is promising to construct p-type Cu 3 N with suitable band gap onto n-type TiO 2 to form TiO 2 /Cu 3 N p-n heterojunction.…”

Effects of Deposition Temperature and Working Pressure on the Thermal and Nanomechanical Performances of Stoichiometric Cu3N: An Adaptable Material for Photovoltaic Applications

“…Cu 3 N thin films, with thicknesses less than 100 nm and grain sizes between 11 nm to 100 nm, can be produced [22,23], exhibiting a cubic anti-ReO 3 crystalline structure with a lattice parameter of 0.3817 nm and presenting a smooth granular morphology [22][23][24]. Their optical properties are basically determined by the band gap, with experimental values ranging from 1.17 to 1.69 eV for the indirect band gap and from 1.72 to 2.38 eV for the direct band gap [25,26].…”