“…The chalcopyrite semiconductor that belongs to I-III-VI compound has substantial interest in recent years (Naveena & Bose, 2019). The CuAlS2 is the one of the family of the ternary chalcopyrite having direct optical band gap of 3.5 eV, and this value highest among those of all the chalcopyrite compound semiconductors, also having major advantage such as low coast, non-toxic and earth abundant, which making it an interesting material for many technological applications, in solar cells, photovoltaic, light emitting devices in blue region of spectrum, as window layers of solar cells (Naveena & Bose, 2019) (Chaki, Mahato, Malek, & Deshpande, 2017), as oxygen gas sensor (Abaab, Bouazzi, & Rezig, 2000), and as UV detectors (Perng, Kao, & Chang, 2014). There are many techniques used to prepare ternary CuAlS2 thin films, such as chemical spray pyrolysis (Caglar, Ilican, & Caglar, 2008), thermal evaporation (Abaab et al, 2000), sulfurization of metallic precursors in a vacuum (Bhandari, Hashimoto, & Ito, 2004), spark plasma sintering (Liu, Wang, Huang, Chen, & Wang, 2007), direct polyol methods (Yue, Wang, Wang, Wang, & Peng, 2008), wet chemical method (Harichandran & Lalla, 2008), simple colloidal route (Poulose et al, 2012), chemical vapour transport (CVT) technique (Chaki, Mahato, & Deshpande, 2014), hydrothermal method(HT) (Sugan, Baskar, & Dhanasekaran, 2015), metal organic chemical vapour deposition (MOCVD) (Damisa, Olofinjana, Ebomwonyi, Bakare, & Azi, 2017), and atomic layer deposition (Schneider et al, 2018), and chemical bath deposition technique (CBD).…”