Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

Abstract

Arsenic alloying is observed for epitaxial layers nominally intended to be In 0 75 Ga 0 25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary In^Gai-xAs-^Ni--,, films are formed with x ~ 0.55 and 0.05 < y < 0.10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.

Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

“…13(d) ), formed by many randomly oriented crystalline domains (see PS), which remains mainly cubic-structured. It is worth to mention that while the hexagonal structure is thermodynamically more stable for nitrides, it is not uncommon to find cubic regions in non-optimized materials 21 .…”