Cubic boron nitride growth from NH3 and BBr3 precursors: a theoretical study

Olander, Jenny; Larsson, Karin

doi:10.1016/s0925-9635(01)00739-7

Cited by 19 publications

(25 citation statements)

References 12 publications

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“…In early 2000's, Density Functional Theory (DFT) has demonstrated the encouraging combination of NH 3 and BBr 3 for ALD growth of cubic BN. 77 The same year, BN films onto silica substrates are ALD synthesized, at 400 and 750 °C, from these two reactants. 58 Films deposited at 400 °C are significantly less ordered and stable than that at 750 °C, which present a turbostratic structure.…”

Section: Boron Halidementioning

confidence: 99%

Atomic layer deposition of stable 2D materials

Hao¹,

Marichy²,

Journet³

2018

2D Mater.

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Following the graphene isolation, strong interest in two dimensional (2D) materials has been driven by their outstanding properties. Their typical intrinsic structure, including strong in-plane covalent bonding and weak out-of-plane Van der Waals interaction, makes them highly promising in diverse areas such as electronics, catalysis, and environment. Growth of 2D materials requires a synthesis approach able to control the deposition onto a support at the atomic scale. Thanks to their simplicity, versatility and ability to control thickness at the angstrom level, Atomic Layer Deposition (ALD) and its variant Atomic Layer Etching (ALET) appear as ones of the most suited techniques to synthesize 2D materials. The development of ALD technique for fabricating 2D materials in the last ten years justifies reviewing its most recent groundbreaking discoveries and progresses. Particular attention will be paid to stable 2D materials especially graphene, h-BN, Mo and W dichalcogenides and few monolayered metal oxides. Specificities and outputs of ALD for 2D material as well as emerging directions and remaining technical challenges will be highlighted. layers. This kind of materials exhibits interesting properties related to their size restriction: electronic confinement, modifying both optical and electronic properties, and high surface to volume ratio that affects the mechanical and chemical properties. 4,5 Therefore, 2D materials are highly attractive due to their potential in cutting edge domains such as micro-, and opto-electronics 4,6 as well as renewable energy, 4,7-9 catalysis, 10,11 gas sensing 12,13 and environment. 4,7,14,15 They are also exciting because of their possibility to be stacked into VdW heterostructures combining and/or tuning their chemical and physical properties. 6,[16][17][18] However, since 2D materials are atomically thin, a suitable manufacturing process capable of controlling their fabrication in terms of structure, composition, thickness, defects, purity and crystallinity without degradation of their original properties is necessary. Two approaches can be considered: the top-down and bottom-up synthetic routes. 19 Historically, top-down approach has first been developed using mechanical and chemical exfoliation techniques, 1,2,20,21 the first example being the well-known graphene exfoliation using scotch tape.Later on, etching processes have been adapted. Recently, Atomic Layer Etching (ALET), 22 the top down variant of Atomic Layer Deposition (ALD), has been introduced for fabricating 2D materials. On the other hand, bottom-up techniques have largely been developed using conventional thin film deposition. These techniques include sputtering, evaporation and Chemical Vapor Deposition (CVD). 3,23,24 However, they are mainly based on either high temperature processes, substrate restrictive deposition or low thickness control. 21,25,26 Amongst all the fabrication processes, ALD appears to be one of the most suited techniques to synthesize 2D materials, because of its simplicity, versatility and c...

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Section: Boron Halidementioning

confidence: 99%

Atomic layer deposition of stable 2D materials

Hao¹,

Marichy²,

Journet³

2018

2D Mater.

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“…Theoretical studies suggested that the adsorption of hydrogen and halogens on BN surfaces [20][21][22][23] changes the hexagonal structure to the cubic one, a change that has been experimentally observed [25]. Various precursors [17][18][19] for chemical vapour deposition (CVD) and atomic layer deposition [16] (ALD) of BN were studied as well.…”

Section: Introductionmentioning

confidence: 97%

“…Recently, Carlsson and Larsson and colleagues carried out experimental [16] and theoretical [17][18][19][20][21][22][23][24] studies on the growth of BN surfaces. Cubic and hexagonal structures were studied.…”

Section: Introductionmentioning

confidence: 99%

Friction coefficient for hexagonal boron nitride surfaces from ab initio calculations

2006

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The friction coefficient for two hexagonal boron nitride (h-BN) sheets was estimated on the basis of ab initio calculations. Several models, both cluster and periodic one, were applied to describe h-BN and the interactions between its dimers. In all cases, the gauche orientation is favoured, the interaction energies being virtually independent of the size of the model. The friction coefficient values, in contrast, converge towards the values from periodic calculations. At the lower limit of the periodic system, the friction coefficients vary between 0.226 and 0.265 depending on the orientations of the dimers. The calculations are in good agreement with an experimental study of the friction [Saito and Honda, Wear 237 (2000) 253], which suggested a friction coefficient of 0.23-0.25 for h-BN.

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“…37 ALD of BN is challenging and processes with different precursors have been attempted in the past. [38][39][40][41][42][43][44][45][46][47][48][49] So far, there is no report of BN being deposited on nanostructures such as micro/nano porous membranes by ALD, and the conformality of the different processes reported have not been studied. ALD of BN is not trivial and such process with different precursors has been attempted in the past.…”

Section: Introductionmentioning

confidence: 99%

Boron Nitride Nanoporous Membranes with High Surface Charge by Atomic Layer Deposition

Weber

Koonkaew

Balme

et al. 2017

ACS Appl. Mater. Interfaces

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In this work, we report the design and the fine-tuning of boron nitride single nanopore and nanoporous membranes by atomic layer deposition (ALD). First, we developed an ALD process based on the use of BBr and NH as precursors in order to synthesize BN thin films. The deposited films were characterized in terms of thickness, composition, and microstructure. Next, we used the newly developed process to grow BN films on anodic aluminum oxide nanoporous templates, demonstrating the conformality benefit of BN prepared by ALD, and its scalability for the manufacturing of membranes. For the first time, the ALD process was then used to tune the diameter of fabricated single transmembrane nanopores by adjusting the BN thickness and to enable studies of the fundamental aspects of ionic transport on a single nanopore. At pH = 7, we estimated a surface charge density of 0.16 C·m without slip and 0.07 C·m considering a reasonable slip length of 3 nm. Molecular dynamics simulations performed with experimental conditions confirmed the conductivities and the sign of surface charges measured. The high ion transport results obtained and the ability to fine-tune nanoporous membranes by such a scalable method pave the way toward applications such as ionic separation, energy harvesting, and ultrafiltration devices.

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Cubic boron nitride growth from NH3 and BBr3 precursors: a theoretical study

Cited by 19 publications

References 12 publications

Atomic layer deposition of stable 2D materials

Atomic layer deposition of stable 2D materials

Friction coefficient for hexagonal boron nitride surfaces from ab initio calculations

Boron Nitride Nanoporous Membranes with High Surface Charge by Atomic Layer Deposition

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