2006
DOI: 10.1016/j.tsf.2005.11.067
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CuGaSe2–CuGa3Se5 phase transition in CCSVT-grown thin films

Abstract: The system CuGaSe 2 -CuGa 3 Se 5 in thin films has been investigated. Layer synthesis was carried out by chemical close-spaced vapour transport (CCSVT) using Cu precursors on Mo/soda-lime glass substrates. The extension of deposition times in a two-step process led to final film compositions with [Ga]/[Cu] ratios ranging from 1 to 3, allowing the study of the phase transition mentioned above. Films showing chalcopyrite (1:1:2), OVC (1:3:5) and twophase were grown. X-ray emission spectroscopy and x-ray diffract… Show more

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Cited by 17 publications
(15 citation statements)
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“…In contrast, the intensity of the measured front-surface spectrum clearly exceeds that of the computed one. This strengthens the assumption of a bi-layer structure formation, which was further supported by X-ray diffraction measurements [21]. In order to investigate in more detail whether in CGSe thin films relevant for solar cell devices, i.e.…”
Section: Surface-and Bulk-sensitive Chemical Analysis Of Chalcopyritesupporting
confidence: 76%
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“…In contrast, the intensity of the measured front-surface spectrum clearly exceeds that of the computed one. This strengthens the assumption of a bi-layer structure formation, which was further supported by X-ray diffraction measurements [21]. In order to investigate in more detail whether in CGSe thin films relevant for solar cell devices, i.e.…”
Section: Surface-and Bulk-sensitive Chemical Analysis Of Chalcopyritesupporting
confidence: 76%
“…The transition region between these two phases moves towards the rear side with increasing gallium content, until the complete layer shows a 1:3:5 structure for a [Ga]/[Cu] ratio of 3.0 [21]. For slightly Cu-rich samples (bulk [Ga]/[Cu] ratio¼0.93) the chemical surface structure agrees with a 1:1:2 composition.…”
Section: Surface-and Bulk-sensitive Chemical Analysis Of Chalcopyritementioning
confidence: 74%
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