CuIn1−xAlxSe2 thin films obtained by selenization of evaporated metallic precursor layers

CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

“…Their values varied also nonlinearly from {a = 5.49Å, c = 11.02Å} for CuInS 2 to {a = 5.30Å, c = 10.36Å} for CuAlS 2 . The same nonlinear behavior was observed in previous work focused on thin films of a similar chalcopyrite, CuIn 1−x Al x Se 2 [21][22][23][24]. Reddy at al.…”

CuAlxGa1−xSe2 thin films for photovoltaic applications: Structural, electrical and morphological analysis

“…A linear dependence of the lattice parameters with the Al content is observed in both cases and has been reported by other authors for CAGS crystals [18,19]. This behaviour follows the Vegard's law in opposition to other Cubased quaternary compound [20]. The shift of the lattice parameters and tetragonal distortion from the standard values is more significant for thinnest samples of 0.6 mm of thickness.…”

“…The dependence of the band gap energy Eg with the Al composition, x, has resulted to be nonlinear and optical bowing parameters of b = 0.66 and b = 0.54 for 0.6 mm and 1.1 mm-CAGS samples, respectively, has been obtained. These values are larger than the obtained for CIGS thin films and similar to those reported for CIAS [17,20]. This leads to think that the Al introduces more distortion than Ga in the ternaries.…”

Crystallization of wide-bandgap CuAlSe2 thin films deposited on antimony doped tin oxide substrates

“…2 shows clearly that the presence of ATO underlayer substrates promotes the formation and crystallization of polycrystalline CAS films with chalcopyrite structure. Homogeneous formation and crystallization conditions of CAS thin films onto bare SLG are more restrictive and have been previously reported [14]. These structural data are related to the effective Se incorporation measured by EDAX and listed in Table 1.…”