CuInP₂S₆‐Based Electronic/Optoelectronic Synapse for Artificial Visual System Application

Abstract

With the development of information processing, various neuromorphic synaptic devices have been proposed, including novel devices mimicking multiple sensory systems in the biosome, in which vision is a vital source of information. Due to the pressing issue of high energy consumption and the ever‐increasing complexity of practical application scenarios, there is an urgent need to investigate optoelectronic synapses with simple structure but multifunctional capabilities, thereby broadening their application scope. Here, remarkable performances in both electrical and optical operation modes are achieved in multilayer graphene/CuInP2S6/Au electronic/optoelectronic device. By modulating the electrical and optical pulses, both short‐term and long‐term memory can be emulated in the same device, while visual perception, processing, and memorizing functions are demonstrated in this single cell with relatively low energy consumption. In addition, light adaptive behavior can also be simulated through optical–electrical cooperative modulation in the device, further providing a novel and promising strategy for future applications in artificial visual systems.

Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D vdW CuInP2S6 for Non‐Volatile Digital Memory and Artificial Synapse

“…Fundamental synaptic functions, including paired‐pulse facilitation, short‐term plasticity, and long‐term plasticity, were simulated by the ferroelectric polarization tuned resistance states. [ 11,15 ] Moreover, long‐range migration of Cu ions was utilized to achieve neural plasticity, [ 20 ] associative learning, experiential learning, [ 12,21 ] and threshold switching characteristics. [ 10 ] However, the above reports only utilize ferroelectricity or ionic conductivity, not fully exploring and exploiting the material advantages of CIPS.…”

Heterointerface engineering of layered double hydroxide/MAPbBr3 heterostructures enabling tunable synapse behaviors in a two-terminal optoelectronic device

“…τ 1 and τ 2 are the relaxation times of the two phases, respectively, and τ 2 is crucial for determining the retention time. 38 The fitted curves and parameters are shown in Fig. 3d and Table S2 (ESI†).…”

Establishing the morphotropic phase boundary in van der Waals ferroelectrics

“…The vdW layered CuInP 2 (S 1−x Se x ) 6 system exhibits unique ferroelectric, piezoelectric and pyroelectric activity, as well as electrocaloric performances, which have great potential applications in piezoelectric transducers, pyroelectric sensorics and memory devices. More importantly, the synergy of ferroelectric and ion migration can achieve high performance electronic devices including neuromorphic computing, memristors, etc [29,30].…”