CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization

Zhou, Zhengji; Yuan, Shengjie; Fan, Jun-Qi; Hou, Ze‐Liang; Zhou, Wenhui; Du, Zuliang; Wu, Sixin

doi:10.1186/1556-276x-7-652

Cited by 53 publications

(33 citation statements)

References 39 publications

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“…The photoelectrochemical responses obtained in our study are higher than the values reported previously for various sensitized-TiO 2 photoelectrodes. 4,5,7,15,51,60,56,63 Also, the results obtained in this study are in agreement with results reported by Yang et al 44 The electronic properties of sensitized and unsensitized TiO 2 NTA lms were determined using the Mott-Schottky (MS) method. The measurements were performed at a frequency of 100 Hz, with the potential scan range from 0.5 to À1 V (vs. SCE) under illumination.…”

Section: Photoelectrochemical Measurementssupporting

confidence: 91%

Application of ZnxCd1−xSe-sensitized TiO2 nanotube arrays as photoanodes for solar cells

et al. 2014

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This study reports the synthesis of Zn x Cd 1Àx Se quantum dot-sensitized titania nanotube array photoelectrodes using a successive ionic layer adsorption and reaction technique and evaluates the photoelectrochemical performance as anodes. The effect of altering the number of sensitization cycles and annealing temperature on optical and photoelectrochemical properties of prepared photoanodes was studied. Surface morphology of the sensitized tubes was analyzed by scanning electron microscopy, while the phase composition was determined using X-ray diffraction and X-ray photoelectron spectroscopy techniques. Spectral response measurements indicated that TiO 2 nanotube arrays coupled with Zn x Cd 1Àx Se quantum dots synthesized in 7 cycles of deposition and annealed at 300 C for 1 h under N 2 exhibited excellent photoelectrochemical properties. The notably high photovoltaic characteristics demonstrate the potential of the Zn x Cd 1Àx Se/TiO 2 heterostructure as an efficient photoanode.

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Section: Photoelectrochemical Measurementssupporting

confidence: 91%

Application of ZnxCd1−xSe-sensitized TiO2 nanotube arrays as photoanodes for solar cells

et al. 2014

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“…Zhou et al reported QDSSCs based on CuInS2 and introduction of In2S3 buffer layer suing SILAR process, which presented as high as ~1.06% PCEs [16]. However, the lower photovoltaic performance of QDSSC is due to severe charge recombination process at the interface of the TiO2/QD/electrolyte interface.…”

Section: Of 11mentioning

confidence: 99%

ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Kim

Bae

Seo³

et al. 2018

Preprint

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Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSSCs). In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is significantly higher than the 2.15% and 3.23% observed for QDSSCs with a TiO2/CuInS2 device and TiO2/CuInS2/ZnS, respectively. Electrochemical impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the photoanode/electrolyte interface and prolongs the electron lifetime.

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“…Zhou et al prepared QDSSCs based on CuInS 2 and introduction of In 2 S 3 buffer layer suing SILAR process, which presented as high as~1.06% PCEs [16]. Meng et al developed a CuInS 2 QDs on reduced graphene oxide sheets using facile one-pot solvothermal approach and delivered a PCE of 1.5% [17].…”

Section: Introductionmentioning

confidence: 99%

ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Kim

Bae

Seo³

et al. 2018

Energies

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Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO 2 blocking layer was deposited on TiO 2 /CuInS 2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO 2 /CuInS 2 /ZnS/SiO 2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO 2 /CuInS 2 (2.15%) and TiO 2 /CuInS 2 /ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO 2 passivation layer on TiO 2 /CuInS 2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

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CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization

Cited by 53 publications

References 39 publications

Application of ZnxCd1−xSe-sensitized TiO2 nanotube arrays as photoanodes for solar cells

Application of ZnxCd1−xSe-sensitized TiO2 nanotube arrays as photoanodes for solar cells

ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

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