CuInS2 thin films: Preparation and properties

Abstract

The growth and electrical properties of CuInS2 thin films are described. Two deposition schemes, single- and double-source methods, are reported. Data are presented indicating the effects of film and substrate temperature on the electrical characteristics (mobility, resistivity, and carrier concentration) of the films. Both n- and p-type films are reported, and the effects of sulfur concentrations are discussed. Some postdeposition annealing effects are also detailed.

Growth and electrical properties of flash evaporated AgGaTe2 thin films

“…During Hall measurements, it was observed that all films are P-type. It was also observed that a decrease in carrier concentration with increasing substrate temperature ultimately results in an increase in Hall mobility [23,24,25] in the films. This may be explained as being due to the increase in substrate temperature of the films increases the grain size as shown in figure 2.…”

Synthesis of porous CuInS2 crystals using a stirrer

“…There are also various techniques for the preparation of CuInS 2 thin films, such as evaporation [6], chemical vapor deposition (CVD) [7], sputtering [8], molecular beam epitaxy (MBE) [9] and spray pyrolysis [10]. Recently, several morphologies of CuInS 2 have been prepared, such as nanorods [11,12], nanotubes [13], nanoparticles [14,15], foam-like [16] and sphere-like CuInS 2 nanocrystallites [17].…”

Synthesis of porous CuInS2 crystals

“…There are also various techniques for the preparation of CuInS 2 thin films, such as evaporation [6], chemical vapor deposition (CVD) [7], sputtering [8], molecular beam epitaxy (MBE) [9] and spray pyrolysis [10]. Recently, several morphologies of CuInS 2 have been prepared, such as nanorods [11,12], nanotubes [13], nanoparticles [14,15], foamlike [16] and sphere-like CuInS 2 nanocrystallites [17].…”