CuO_x/a‐Si:H heterojunction thin‐film solar cell with an n‐type µc‐Si:H depletion‐assisting layer

Abstract

We showed that thin n-type CuO x films can be deposited by radio-frequency magnetron reactive sputtering and demonstrated the fabrication of n-CuO x /intrinsic hydrogenated amorphous silicon (i-a-Si:H) heterojunction solar cells (HSCs) for the first time. A highly n-doped hydrogenated microcrystalline Si (n-μc-Si:H) layer was introduced as a depletionassisting layer to further improve the performance of n-CuO x /i-a-Si:H HSCs. An analysis of the external quantum efficiency and energy-band diagram showed that the thin depletion-assisting layer helped establish sufficient depletion and increased the built-in potential in the n-CuO x layer. The fabricated HSC exhibited a high open-circuit voltage of 0.715 V and an efficiency of 4.79%.

Effect of NO2 and NH3 on the resistive switching behavior of W/Cu x O/Cu devices

“…This suggestion is supported by previous literature that points to the creation of n-type Cu x O given a relatively high (>50% PO 2 ) [15] or low introduction of oxygen (e.g. Cu-rich) during deposition [15,16]. The high initial resistance of this memristor (on the order of 10 9 ohms) versus the resistance of the previous memristor (on the order of 10 5 ohms) shows evidence of relatively high oxygen concentration in spite of both devices being the same thicknesses.…”

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

“…A deposition process called successive ion layer adsorption and reaction (SILAR) that can deposit Cu 2 O and CuO at mild solution process conditions without ion bombardment is especially promising [ 65 ]. The recent observation of n-type behavior in CuO x suggests that CuO/CuO x junctions should be fabricated by sputtering and investigated for homojunction behavior [ 46 ].…”

“…In the CuO devices discussed thus far, the sputtered CuO layer is always p-type. Recently, however, Lee et al has observed n-type behavior in nanoscale non-stoichiometric CuO x deposited by reactive magnetron sputtering [ 46 ]. The n-type conductivity which was confirmed by Hall effect measurements results from the fact that in the initial stage of deposition, the CuO x is Cu rich and this causes electrons to be majority carriers.…”

“…The n-type conductivity which was confirmed by Hall effect measurements results from the fact that in the initial stage of deposition, the CuO x is Cu rich and this causes electrons to be majority carriers. By depositing 50 nm of n-CuO x onto intrinsic i-a-Si:H in a heterojunction p-i-n device structure, a maximum η of 3.04% was measured [ 46 ]. This can be further increased to 4.79% by inserting a thin n-mc Si:H depletion assisting layer (DAL) between the CuO x and i-a-Si:H layer.…”

Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications

“…The relatively smaller band gap of CuO makes it a potentially superior material for photo-detection and optical switching applications in the visible or near-infrared region in comparison to other large band-gap metal oxides [12,13]. Reports are available on the development of CuO based renewable energy technologies by exploiting its efficient solar absorbance and low thermal emittance properties [9,[13][14][15][16][17][18][19].…”