Abstract.Copper oxides, such as CuO and Cu 2 O, are promising materials for H 2 S detection because of the reversible reaction with H 2 S to copper sulfides (CuS, Cu 2 S). Along with the phase change, the electrical conductance increases by several orders of magnitude. On CuO x films the H 2 S reaction causes the formation of statistically distributed Cu x S islands. Continuous exposition to H 2 S leads to island growth and eventually to the formation of an electrical highly conductive path traversing the entire system: the so-called percolation path. The associated CuO x / Cu x S conversion ratio is referred to as the percolation threshold. This pronounced threshold causes a gas concentration dependent switch-like behaviour of the film conductance. However, to utilize this effect for the preparation of CuO-based H 2 S sensors, a profound understanding of the operational and morphological parameters influencing the CuS path evolution is needed.Thus, this article is focused on basic features of H 2 S detection by copper oxide films and the influence of structural parameters on the percolation threshold and switching behaviour. In particular, two important factors, namely the stoichiometry of copper oxides (CuO, Cu 2 O and Cu 4 O 3 ) and surface morphology, are investigated in detail. CuO x thin films were synthesized by a radio frequency magnetron sputtering process which allows modification of these parameters. It could be shown that, for instance, the impact on the switching behaviour is dominated by morphology rather than stoichiometry of copper oxide.