CuO thin films produced for improving the adhesion between Cu and Al<sub>2</sub>O3 foils in a direct bonded copper (DBC) process

Castillo, H.A.; Cruz, W. de la; Bixbi, B.; Hernández, Antonio Diaz

doi:10.1080/00218464.2017.1320222

Cited by 10 publications

(9 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[13] [14] [15]. The adhesive forces bonding is a key joining technology in many manufacturing areas which include the automotive and aerospace industries, adding to biomedical and microelectronics applications [16]. The reactive species (electrons, atomic or molecular ions, atoms or molecules energetically excited) in the cold plasma can modify the superficial functional characteristics of the target material and promote the surface functionalization reactions by generating organic or inorganic thin layers because of the recombination of radicals or molecular fragments species on the surfaces of this material [17] [18] [19].…”

Section: ( )mentioning

confidence: 99%

Characterization of a New DC-Glow Discharge Plasma Set-Up to Enhance the Electronic Circuits Performance

Talab¹,

Yahia²,

Saudy³

et al. 2020

JMP

View full text Add to dashboard Cite

The (DC-GDPAU) is a DC glow discharge plasma experiment that was designed, established, and operated in the Physics Department at Ain Shams University (Egypt). The aim of this experiment is to study and improve some properties of a printed circuit board (PCB) by exposing it to the plasma. The device consists of cylindrical discharge chamber with movable parallel circular copper electrodes (cathode and anode) fixed inside it. The distance between them is 12 cm. This plasma experiment works in a low-pressure range (0.15-0.70 Torr) for Ar gas with a maximum DC power supply of 200 W. The Paschen curves and electrical plasma parameters (current, volt, power, resistance) characterized to the plasma have been measured and calculated at each cm between the two electrodes. Besides, the electron temperature and ion density are obtained at different radial distances using a double Langmuir probe. The electron temperature (KT e) was kept stable in range 6.58 to 10.44 eV; whereas the ion density (n i) was in range from 0.91 × 10 10 cm −3 to 1.79 × 10 10 cm −3. A digital optical microscope (800×) was employed to draw a comparison between the pre-and after effect of exposure to plasma on the shaping of the circuit layout. The experimental results show that the electrical conductivity increased after plasma exposure, also an improvement in the adhesion force in the Cu foil surface. A significant increase in the conductivity can be directly related to the position of the sample surfaces as well as to the time of exposure. This shows the importance of the obtained results in developing the PCBs manufacturing that uses in different microelectronics devices like those onboard of space vehicles.

show abstract

Section: ( )mentioning

confidence: 99%

Characterization of a New DC-Glow Discharge Plasma Set-Up to Enhance the Electronic Circuits Performance

Talab¹,

Yahia²,

Saudy³

et al. 2020

JMP

View full text Add to dashboard Cite

show abstract

“…Copper oxide (CuO) is considered a suitable material as the anti-reflection (AR) layer due to its black color. − By tuning the morphology of the AR layer or the interface layer, the adhesion of the AR layer to the substrate could be slightly improved. ,,, However, the low resistance of CuO to etching of the chemical solution during planarization is another issue . Nickel (Ni)-contained species exhibit better resistance to chemical corrosion and show improved adhesion to PI that are also considered potential AR materials. − …”

Section: Introductionmentioning

confidence: 99%

Anti-reflection Layer-Sputtered Transparent Polyimide Substrate with Reliable Adhesion Strength to the Copper Layer

et al. 2023

View full text Add to dashboard Cite

Parameters of DC-reactive magnetron sputtering are optimized to deposit anti-reflection (AR) layers on transparent polyimide (PI) substrates, followed by the deposition of the conductive copper layer, to fabricate practically reliable composite films as advanced flexible circuits. When the deposition thickness is controlled and the gas composition during sputtering is adjusted, the resultant AR layer-coated PI film exhibits low reflectance and reveals improved adhesion strength to the copper layer. The adhesion reliability tests confirm that the peel strength between the PI film and the deposited layers could be further improved after thermal processing due to the formation of a worm-like morphology for better mechanical interlocking with layers. The facile sputtering process successfully fabricates a reliable substrate material with low reflectance and sufficient adhesion strength to copper for application as flexible printed circuits.

show abstract

“…Various bonding methods for Cu and ceramic, such as direct bonding copper, 1,7,14,15 direct plating copper, 8,16 active metal bonding, 10,12 and laser activation metallization 9,17 which limits the current carrying capacity. In direct plating copper technology, the ceramic is first surface modified by vacuum sputtering, and then electro-plated Cu is made on the ceramic via chemical bonding at a low temperature of ∼300 • C. 8 The thickness of Cu is limited to below 1 mm for a low plating rate of several µm/h.…”

Section: Introductionmentioning

confidence: 99%

“…The increase of the thickness of Cu improves the current carrying capacity in high‐power devices, like the insulated gate bipolar transistor module in new energy automobile and 5G communication 5,6 . In most of the reported works, 7–9 the thickness of Cu is less than 1 mm in Cu/ceramic joint. Here, we consider the Cu with a thickness of higher than 1 mm as thick Cu.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Microstructure and mechanical property of thick Cu/AlN joints formed at low temperature

Chen,

Xu,

et al. 2023

J Am Ceram Soc.

View full text Add to dashboard Cite

The bonding of thick Cu and AlN is necessary in power modules with the development of high–frequency communication technology. In this work, 2 mm – thick Cu was successfully bonded with AlN by using Sn9Zn solder with the assistance of ultrasonication at 230°C. Results showed that an AlN/Sn9Zn/Cu joint without crack was manufactured with a cooling rate of 7°C/min. Nonreactive wetting was realized between AlN and Sn9Zn, forming an amorphous transition layer. CuZn2 and CuZn were formed at the Sn9Zn/Cu interface. A joint with the highest bonding strength of 30.07 MPa was obtained, in which the AlN/Sn9Zn interface was no longer the weakest location. This work provides a low–temperature manufacturing method for thick Cu/AlN joints.This article is protected by copyright. All rights reserved

show abstract

CuO thin films produced for improving the adhesion between Cu and Al₂O3 foils in a direct bonded copper (DBC) process

Cited by 10 publications

References 28 publications

Characterization of a New DC-Glow Discharge Plasma Set-Up to Enhance the Electronic Circuits Performance

Characterization of a New DC-Glow Discharge Plasma Set-Up to Enhance the Electronic Circuits Performance

Anti-reflection Layer-Sputtered Transparent Polyimide Substrate with Reliable Adhesion Strength to the Copper Layer

Microstructure and mechanical property of thick Cu/AlN joints formed at low temperature

Contact Info

Product

Resources

About

CuO thin films produced for improving the adhesion between Cu and Al2O3 foils in a direct bonded copper (DBC) process

Cited by 10 publications

References 28 publications

Characterization of a New DC-Glow Discharge Plasma Set-Up to Enhance the Electronic Circuits Performance

Characterization of a New DC-Glow Discharge Plasma Set-Up to Enhance the Electronic Circuits Performance

Anti-reflection Layer-Sputtered Transparent Polyimide Substrate with Reliable Adhesion Strength to the Copper Layer

Microstructure and mechanical property of thick Cu/AlN joints formed at low temperature

Contact Info

Product

Resources

About

CuO thin films produced for improving the adhesion between Cu and Al₂O3 foils in a direct bonded copper (DBC) process