Curie temperature in InMnP and the mechanism of phase transition

Photoluminescence Features of GaSb Doped by Fe

“…Diluted magnetic semiconductors (DMSs) based on III-V compound semiconductor crystals doped with 3d impurities of the transition metal group attract considerable interest with the prospects of the development of new spintronic devices combining useful properties of semiconductors and ferromagnets (Jungwirth et al, 2006). Since the discovery of carrier-induced ferromagnetism in Mn-doped InAs and GaAs (Munekata et al, 1989;Ohno et al, 1996) much effort has been devoted to the study of Mn doping of III-V compound semiconductors including GaN ( Shon et al, 2002), GaSb (Matsukura et al, 2000), InP (Park and Kang, 2007) and GaP (Overberg et al, 2001). At the same time the iron doped semiconductors were less studied.…”

Ferromagnetic properties of single walled carbon nanotubes doped with manganese oxide using an electrochemical method

“…% according to the applied potentials. In this work, the Zener model description of carrier induced ferromagnetism 19,[23][24][25][26] with the transition metal doping in DMSs is not available in the SWCNTs because the effect of hole concentration on Curie temperature is not shown here due to the measurement limit of temperature. The enhanced ferromagnetic behavior of the Mn doped SWCNTs is mainly originated from the increase of manganese concentration though the possible formation of two-dimensional defect structures of SWCNTs with the 27 The Raman analysis of Figure 1(b) rules out this possibility from high quality SWCNTs.…”