Current analysis of polyimide passivated InGaP/GaAs HBT

Masum, J.; Parmiter, Philippa; Hall, Trevor J.; Crouch, M.A.

doi:10.1049/ip-cds:19960567

Cited by 10 publications

(9 citation statements)

References 13 publications

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“…The devices are transfer printed in deterministic assembly onto a temporary Si substrate using ultrathin polyimide (PI, ∼1 μm) as an adhesive, followed by ground–signal–ground (G–S–G) RF interconnect metallization. PI is an excellent material for GaAs-based devices not only as an adhesive, but also as a passivating material that can suppress the high surface states of GaAs and prevent leakage current 37 . Devices are then released from the temporary substrate and printed onto a CNF substrate using a PDMS stamp ( Supplementary Fig.…”

Section: Resultsmentioning

confidence: 99%

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

et al. 2015

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Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

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Section: Resultsmentioning

confidence: 99%

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

et al. 2015

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“…A further effect of current stressing is an observed positive shift in the emitter/base voltage, which was attributed to Be diffusion [5] from the base. However, the devices in this study are C-doped and still this positive shift occurred; interface effects are responsible for this effect [6].…”

Section: Introductionmentioning

confidence: 68%

“…Similarly the collector current I c comprises: (i) the electron current injected across the heterointerface (I n ), which in abrupt heterojunctions is governed by the thermionic tunnelling (I Tun ); (ii) drift-diffusion current (I diff ) for the remainder of the device; (iii) the leakage current, I cleak , originating from the emitter/base and the base/collector peripheries. The total base and collector currents are given by [7]…”

Section: Theorymentioning

confidence: 99%

“…and I scro , I bakinjo , I BL and I CL are the pre-exponential currents for the space-charge, back-injection, base and collector leakage currents. I BL and I CL are dependent on the position of the Fermi-level pinning and the surface trap density, I n is the electron current at the edge of the quasi neutral emitter, V T is the thermal voltage, V B is the valence barrier faced by back-injected carriers, γ is the injection efficiency, α is the base transport factor, n s is the number of carriers injected into the surface, f L is process dependent and is an empirical parameter [7], P E is the emitter perimeter and η is the ideality factor. The ideality factor, η, of the current passing the emitter/base diode, can be extracted from the non-resistive region of the base and collector currents separately.…”

Section: Theorymentioning

confidence: 99%

“…It is a sensitive indicator of where the consumption of holes occurs, the base current η ranges between 1 and 2. An ideality factor of 1 indicates that contributions from the base bulk neutral region or the extrinsic base surface dominates the recombination current [7][8][9][10][11]. This becomes more important as applied bias, V BE , increases, while η = 2 indicates that the majority of the recombination occurs at the space-charge region, which consists of recombination at the heterointerface and bulk of the space-charge, and at the emitter/base periphery [12][13][14][15].…”

Section: Theorymentioning

confidence: 99%

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Degradation of AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors under high current stress

Masum

Hall

1997

Semicond. Sci. Technol.

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The effect of current stressing on the degradation of the current-voltage characteristics of carbon-doped base AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) is reported here. The devices tested comprised the following: compositionally graded and abrupt emitter/base junction AlGaAs/GaAs HBTs and emitter edge thinned (EET) compositionally graded junction AlGaAs/GaAs and InGaP/GaAs HBTs. Results for the EET and InGaP/GaAs devices are presented here for the first time.It is shown experimentally that after current stressing the base current of graded junction AlGaAs/GaAs HBTs increases appreciably whilst its collector current shows little change. The lower potential faced by the carriers of the graded junctions increases the recombination at the surface and stressing increases the heterointerface trap density, which accounts for the device deterioration. Eventually these devices exhibit a current gain degradation, as well as an increased turn-on voltage.The superior stability of the abrupt junction AlGaAs/GaAs and InGaP/GaAs HBT to current stressing is demonstrated over periods of more than 50 h; no notable changes in the base and collector currents were observed. Nevertheless, the InGaP/GaAs system is preferable to an abrupt AlGaAs/GaAs system due to its lower value of turn-on voltage and reduced surface trap density.

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ZnO Nanostructures

2009

Zinc Oxide

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One-dimensional semiconductor nanowires and nanorods have attracted increasing attention due to their physical properties arising from quantum confinement (such as electronic quantum transport and enhanced radiative recombination of carriers). However, increased surface-to-volume ratio and the role of nonradiative surface recombination would have to be dealt with. Nanowires could form the fundamental building blocks for applications such as short-wavelength nanolasers, field-effect transistors, ultrasensitive nano-sized gas sensors, nanoresonators, transducers, actuators, nanocantilevers, and field emitters (FEs) [1][2][3][4]. These nanostructures are ideal for studying transport mechanisms in one-dimensional systems, which are important not only for understanding the fundamental phenomena in lowdimensional systems, but also for developing new generation nanodevices with high performance. Many nanowires made of materials such as Si, C, InP, GaAs, CdS, SnO 2 , GaN, ZnO, and In 2 O 3 have been fabricated for different applications using mostly a catalyst-assisted vapor-liquid-solid (VLS) growth method (vapor-solid process if without the catalyst) [1, 2, 5, 6]. Among these materials, ZnO is considered to be the most promising one due to its large exciton binding energy (60 meV), high electromechanical coupling constant, and resistivity to harsh environment as well as the relative ease with which such structures can be produced with ZnO. Therefore, 1D ZnO structures stimulated a good deal of attention, and a large number of publications have appeared lately reporting nanostructures of various shapes (e.g., nanowires, nanobelts, nanorings, nanotubes, nanodonuts, nanopropellers, etc.) grown by different methods [1,2,. In this chapter, synthesis and properties of such nanostructures formed of ZnO are discussed. 7.

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Current analysis of polyimide passivated InGaP/GaAs HBT

Cited by 10 publications

References 13 publications

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

Degradation of AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors under high current stress

ZnO Nanostructures

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