2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems 2009
DOI: 10.1109/nems.2009.5068708
|View full text |Cite
|
Sign up to set email alerts
|

Current capacity and thermal transport in carbon nanofiber interconnects

Abstract: Carbon nanofibers (CNF) are studied in a horizontal configuration as a model for on-chip interconnects. The electrical performance is determined by both CNF resistivity and contact resistance with electrodes. Reliability and current capacity are determined by Joule heating in the system and the thermal accompanying transport. We show that current capacity can be modeled by accounting for the nature of the contacts with the substrate and with the electrodes.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2012
2012
2013
2013

Publication Types

Select...
2

Relationship

1
1

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 22 publications
0
2
0
Order By: Relevance
“…The 2D model solutions are compared with a simplified model developed for similar 1D systems [32][33][34]. The model previously presented is the 1D simplification of the model proposed in this work which is applicable when temperature dependence in y can be neglected, i.e., @ 2 DT @y 2 ¼ 0.…”
Section: Resultsmentioning
confidence: 99%
“…The 2D model solutions are compared with a simplified model developed for similar 1D systems [32][33][34]. The model previously presented is the 1D simplification of the model proposed in this work which is applicable when temperature dependence in y can be neglected, i.e., @ 2 DT @y 2 ¼ 0.…”
Section: Resultsmentioning
confidence: 99%
“…When one creates micro and nanoelectronical devices based on flexible substrates (flexible electronics) the most important are acceptable mechanical and conducting properties of the film materials based on CNT than based on well-known semiconductor and metal materials. It should be noted that for CNT the ratios of the breaking strength derivative (~10 GPa [1]) and specific conductivity (   [2]) to the material density is several orders of magnitude greater than ones for Cu or Al films and wires that are commonly used in microelectronics [3,4]. For example in Cu nanowires the value of the current density was achieved several orders of magnitude smaller than in CNT wires  at which the material starts to fail.…”
Section: Introductionmentioning
confidence: 98%