Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

Asubar, Joel T.; Kobayashi, Yoshihiro; Yoshitsugu, Koji; Yatabe, Zenji; Tokuda, Hirokuni; Horita, Masahiro; Uraoka, Yukiharu; Hashizume, Tamotsu; Kuzuhara, Masaaki

doi:10.1109/ted.2015.2440442

Cited by 33 publications

(15 citation statements)

References 33 publications

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“…A detailed description of the same experimental procedure is given in our previous works. 27,29) 3. Results and discussion The result of the qualitative assessment of current collapse is shown in Fig.…”

Section: Experimental Methodsmentioning

confidence: 99%

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Asubar¹,

Yoshida²,

Tokuda³

et al. 2016

Jpn. J. Appl. Phys.

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We report on the highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) by combined application of prepassivation oxygen (O 2 ) plasma treatment and gate field plate (FP) structures schemes. Four different devices were fabricated in this work: (1) conventional HEMT as reference device, (2) field-plated HEMT, (3) O 2 plasma-treated HEMT, (4) both field-plated and O 2 plasma-treated HEMT. Analysis of dependence of normalized dynamic R on (NDR) on gate pulse on-time (t on ) revealed that gate-FP reduces the emission time constant (τ i ) of trapped electrons while O 2 -plasma treatment decreases the density of traps. For all measurement conditions, the device with both FP and O 2 plasma treatment exhibited the least NDR compared to devices with either FP or O 2 plasma treatment only, demonstrating for the first time the compatibility of both O 2 plasma treatment and FP schemes in mitigating current collapse.

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Section: Experimental Methodsmentioning

confidence: 99%

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Asubar¹,

Yoshida²,

Tokuda³

et al. 2016

Jpn. J. Appl. Phys.

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“…Following these pioneering works, a significant reduction in current collapse was also achieved in AlGaN=GaN HEMTs using HPWVA. 64) The HPWVA process was carried out prior to the SiN passivation step. Devices to be subjected to HPWVA were initially set in a sealed chamber.…”

Section: Effect Of High-pressure Water Vapor Annealingmentioning

confidence: 99%

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Kuzuhara

Asubar

Tokuda

2016

Jpn. J. Appl. Phys.

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115

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In this paper, we give an overview of the recent progress in GaN-based high-electron-mobility transistors (HEMTs) developed for mainstream acceptance in the power electronics field. The comprehensive investigation of AlGaN/GaN HEMTs fabricated on a free-standing semi-insulating GaN substrate reveals that an extracted effective lateral breakdown field of approximately 1 MV/cm is likely limited by the premature device breakdown originating from the insufficient structural and electrical quality of GaN buffer layers and/or the GaN substrate itself. The effective lateral breakdown field is increased to 2 MV/cm by using a highly resistive GaN substrate achieved by heavy Fe doping. Various issues relevant to current collapse are also discussed in the latter half of this paper, where a more pronounced reduction in current collapse is achieved by combining two different schemes (i.e., a prepassivation oxygen plasma treatment and a field plate structure) for intensifying the mitigating effect against current collapse. Finally, a novel approach to suppress current collapse is presented by introducing a three-dimensional field plate (3DFP) in AlGaN/GaN HEMTs, and its possibility of realizing true collapse-free operation is described.

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“…Therefore, AlGaN/GaN HEMTs have been recognized as excellent devices. [1][2][3][4]. As we already know, the effect of electrostatic discharge (ESD) on device stability and reliability is very important, especially the AlGaN/GaN HEMTs are applied to high power electronics [5].…”

Section: Introductionmentioning

confidence: 99%

“…As we already know, the effect of electrostatic discharge (ESD) on device stability and reliability is very important, especially the AlGaN/GaN HEMTs are applied to high power electronics [5]. Despite the high breakdown field of GaN (3.3 MV/cm), transistors based on GaN are still threatened due to ESD [6,7]. Devices are placed in the high voltages or currents during ESD events leading to their failure eventually.…”

Section: Introductionmentioning

confidence: 99%

Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress

Ren

Chen

Liu

et al. 2021

IEEE J. Electron Devices Soc.

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The failure behavior and the corresponding physical mechanism of the AlGaN/GaN high electron mobility transistors (HEMTs) under transmission line pulse (TLP) stress were investigated in this paper. The result shows that the output and transfer characteristics of the AlGaN/GaN HEMTs after 90 cycles begin to degrade by comparing with the fresh ones under 40 V TLP voltage, and the gate leakage current of the devices slightly increases. When the TLP voltage of 52 V was applied, a catastrophic failure occurs for the AlGaN/GaN HEMTs. Furthermore, the failure of the AlGaN/GaN HEMTs was located, and the micro-morphology of the abnormal spot was observed. The result shows that the gate metal was damaged due to the large TLP stress. The failure mechanism may be mainly attributed to the Joule heat that causes the high lattice temperature of 1160 K as well as the electric field, and it is higher than the melting point of Au (1064 K) in the gate metal (Au/Ti/Mo). The results may be useful in the design and application of electrostatic discharge (ESD) for AlGaN/GaN HEMTs.

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Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

Cited by 33 publications

References 33 publications

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress

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