2011
DOI: 10.1002/aenm.201100552
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Current Collecting Grids for ITO‐Free Solar Cells

Abstract: Indium-tin-oxide (ITO) free polymer solar cells prepared by ink jet printing a composite front electrode comprising silver grid lines and a semitransparent PEDOT:PSS conductor are demonstrated. The effect of grid line density is explored for a large series of devices and a careful modeling study enabling the identification of the most rational grid structure is presented. Both optical and light beam induced current (LBIC) mapping of the devices are used to support the power loss model and to follow the evoluti… Show more

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Cited by 120 publications
(86 citation statements)
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“…LBIC has been used to identify spatial features in OPV devices that vary depending on the device's preparation process [13]. Krebs et al [21] used the technique to investigate printed metal electrodes, while Galagan et al looked at the impact of current collecting grids [22]. The technique has also previously been used to study degradation in organic cells.…”
Section: Introductionmentioning
confidence: 99%
“…LBIC has been used to identify spatial features in OPV devices that vary depending on the device's preparation process [13]. Krebs et al [21] used the technique to investigate printed metal electrodes, while Galagan et al looked at the impact of current collecting grids [22]. The technique has also previously been used to study degradation in organic cells.…”
Section: Introductionmentioning
confidence: 99%
“…Since this will be a reasonably large current in comparison to 2T tandem devices, the series resistance of the electrode will limit the width of the active area for an efficient charge extraction. For the calculation a 300 nm thick inkjet printed Ag grid structure with a pitch of 2.5 mm was considered as intermediate electrode [20]. Fig.…”
Section: Effect Of Parallel Connection At Module Levelmentioning
confidence: 99%
“…Such models have recently been reported by several groups. 8,9 All these models need intrinsic current-voltage (IV) characteristics as inputs, to describe the diode characteristics of the cell. This can be based on an experimental IV curve which has been corrected for the series resistance and shadow losses in the measurement, or it can be the result of a device physics model.…”
Section: Introductionmentioning
confidence: 99%