Current-driven magnetic domain-wall logic

Abstract

Spin-based logic architectures provide nonvolatile data retention, near-zero leakage, and scalability, extending the technology roadmap beyond complementary metal-oxidesemiconductor (CMOS) logic [1][2][3][4][5][6][7][8][9][10][11][12][13] . Architectures based on magnetic domain-walls take advantage of fast domain-wall motion, high density, non-volatility, and flexible design in order to process and store information 1,3,14-16 . Such schemes, however, rely on domain-wall manipulation and clocking using an external magnetic field, which limits their implementation in dense, large scale chips. Here we demonstrate a concept to perform allelectric logic operations and cascading in domain-wall racetracks. We exploit the chiral coupling between neighbouring magnetic domains induced by the interfacial Dzyaloshinskii-Moriya interaction 17-20 to realize a domain-wall inverter, the essential basic building block in all implementations of Boolean logic. We then fabricate reconfigurable NAND and NOR logic gates, and perform operations with current-induced domain-wall motion. Finally, we cascade several NAND gates to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. Our work provides a viable platform for scalable all-electric magnetic logic, paving the way for memory-in-logic applications.

Observation of Strong Bulk Damping‐Like Spin‐Orbit Torque in Chemically Disordered Ferromagnetic Single Layers

“…Currently, exerting a nonzero damping-like spin-orbit torque (τ DL ) on a ferromagnet (FM) layer requires an external transversely polarized spin current from the bulk spin Hall effect (SHE) [1][2][3][4][5][6][7][8][9] of an adjacent spin-orbit layer, an interfacial spin-orbit effect at magnetic interfaces, [8,[10][11][12][13] or the anomalous Hall effect (AHE) [13] of an adjacent FM layer. Very recently, the generation of spinorbit torques (SOTs) via current flow inside FMs has become an emerging focus of spin-orbitronics.…”

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

“…There are various spintronic devices like spin-valve [240], MTJ [81,[241][242][243][244][245], ferroelectric tunnel junction (FTJ) [246][247][248], domain wall [249][250][251][252][253][254][255][256][257], Skyrmion [258][259][260][261]and all spin logic (ASL) devices [262][263][264][265][266][267][268][269], etc. have been reported in the literature.…”

An all-electrical magnetic logic gate that harnesses chirality between domains

“…A method has been developed in which the walls between these domains are manipulated electrically, rather than magnetically, to produce a logic gate. See p.214 2 have produced a NOT logic gate that flips the direction of magnetization of magnetic domains by electrical means. In the authors' system, mobile domains of a cobalt wire that have up or down magnetic moments act as data bits.…”

“…A working logic gate that uses magnetic elements and is driven completely electrically, without the need for an external magnetic field, has yet to be demonstrated 1 . However, on page 214, Luo et al 2 report that they have harnessed the chirality ('handedness') of a system to invert the direction of magnetization of domains in a cobalt wire purely by means of an electric current. The resulting inverter device acts as a 'NOT' gate, which they use to build up other logic gates such as NAND and NOR.…”