1993
DOI: 10.1109/16.239729
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Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities

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Cited by 152 publications
(34 citation statements)
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“…This expresses the minimum temperature rise that, for a given , can lead to thermal runaway in voltage-controlled mode. From (5), (9) and (13) it is clear that selfheating will have reduced at the critical point by an amount of (29) With this definition, the critical can be written as…”
Section: Discussionmentioning
confidence: 99%
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“…This expresses the minimum temperature rise that, for a given , can lead to thermal runaway in voltage-controlled mode. From (5), (9) and (13) it is clear that selfheating will have reduced at the critical point by an amount of (29) With this definition, the critical can be written as…”
Section: Discussionmentioning
confidence: 99%
“…A parameter generally adopted to describe the electrothermal behavior of a bipolar transistor is the base-emitter voltage temperature coefficient [9], [13]. This coefficient is defined as the shift required to keep the collector-current constant as the junction temperature changes [8], [22] (5) Since always increases with temperature, is negative, regardless of the material in which the transistor is fabricated.…”
Section: The Base-emitter Voltage Temperature Coefficient Modelmentioning
confidence: 99%
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“…T IS WIDELY recognized that the behavior of today's high-frequency bipolar devices and circuits is governed by coupled electrical and thermal phenomena [1]- [5], rather than by purely electrical effects. The positive current-temperature feedback may not only adversely affect the safe operating area of devices but also threatens to impose a fundamental limit to the speed [6].…”
mentioning
confidence: 99%