We present line-and area-scans of the Hall potential landscape of a twodimensional electron system (2DES) in narrow (AlGa)As-based Hall bars under quantum Hall (QH) conditions, obtained by low-temperature scanning force microscopy. For several magnetic field values B in the regime of the QH plateau with Landau level filling factor ν = 2, we measured the evolution of the Hall potential profiles and of the longitudinal voltage drop along the Hall bar as a function of increasing voltage/current bias, leading finally to the electrically induced breakdown of the quantum Hall effect (QHE). Basically two types of evolution were observed: for the low B-field side of the QHE plateau, two distinct Hall potential drops appear close to the two edges of a cross section, equally distributed at low bias but continuously developing to an asymmetrical distribution with increasing bias. At high bias, a steady increase of the longitudinal voltage drop is observed, accompanied by a rising slope of the Hall potential drop in the bulk. For the upper B-field side of the QH plateau, the Hall voltage drops are broadly distributed across the whole cross section, and the distribution remains almost unchanged until the bias reaches a critical value where the Hall potential profile changes rather abruptly, enhancing locally the Hall field. Beyond this, with further increase of the bias, a steep rise of the longitudinal voltage drop is detected. These findings are naturally explained in the microscopic picture of the QHE, based on the self-consistent evolution of the Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. compressible and incompressible landscape inside the 2DES with increasing bias.Keywords: quantum Hall effect, breakdown of the QHE, incompressible stripes, scanning force microscopy, current distribution, Hall potential landscape 1 Layer sequence for sample A: on top of a semi-insulating GaAs substrate, a GaAs/AlGaAs superlattice 50x (10 nm, 10 nm) was grown, followed by 500 nm GaAs, 20 nm AlGaAs spacer, 25 nm AlGaAs doped with Si, 5 nm AlGaAs, and, finally, 5 nm GaAs as cap layer. For sample B, the AlGaAs spacer layer was 25 nm thick, the AlGaAs:Si doping layer 20 nm. 2 New J. Phys. 16 (2014) 113071 K Panos et al