Current Induced Domain‐wall Motion in Magnetic Nanowires

Thomas, Luc; Parkin, Stuart S. P.

doi:10.1002/9780470022184.hmm210

Cited by 17 publications

(11 citation statements)

References 171 publications

(268 reference statements)

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“…The dimensions of the notch structures were chosen to be comparable with the extent of the DW width using the definitions given in Ref. 13 so as to present an abrupt change to the potentialenergy landscapes. We present detailed results for nanowires nominally 300 nm wide with notch structures of nominal depth approximately 50% of the wire width, as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Dependence of domain wall pinning potential landscapes on domain wall chirality and pinning site geometry in planar nanowires

et al. 2009

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report on domain wall pinning behavior and the potential-energy landscapes created by notches of two different geometries in planar Permalloy nanowires. Domain wall depinning was probed experimentally using spatially resolved magneto-optical Kerr effect measurements. The spin structure of pinned domain walls was determined using Lorentz microscopy, and domain wall pinning behavior was also analyzed using micromagnetic simulations, which are in good qualitative agreement with experimental results. All notch structures have dimensions that are comparable with the domain wall length scales. For the notch structures investigated, the depinning field experienced by a domain wall is found to be relatively insensitive to notch geometry although the pinning behavior is highly sensitive to both the wall type and the wall chirality spin structure. Energetically, the notches present both potential barriers and/or potential wells depending on the micromagnetic structure of the domain wall, and we find that the chirality of the domain wall is a key determinant of the pinning potential landscape. The pinning behavior of domain walls is discussed in detail, and direct quantitative measurements of the width and depth of the potential wells and/or barriers responsible for domain wall pinning are given for vortex walls pinned in triangular and rectangular notches.

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Section: Methodsmentioning

confidence: 99%

Dependence of domain wall pinning potential landscapes on domain wall chirality and pinning site geometry in planar nanowires

et al. 2009

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“…The domain wall internal structure depends on the thickness, width and material of the constituting magnetic nanostructure178. This internal structure has a strong influence on the DW dynamics, which is of uttermost importance for devices in which the domain wall position is controlled and manipulated by field910111213 or current pulses141516.…”

mentioning

confidence: 99%

Third type of domain wall in soft magnetic nanostrips

Nguyen

Fruchart

Pizzini

et al. 2015

Sci Rep

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Magnetic domain walls (DWs) in nanostructures are low-dimensional objects that separate regions with uniform magnetisation. Since they can have different shapes and widths, DWs are an exciting playground for fundamental research, and became in the past years the subject of intense works, mainly focused on controlling, manipulating, and moving their internal magnetic configuration. In nanostrips with in-plane magnetisation, two DWs have been identified: in thin and narrow strips, transverse walls are energetically favored, while in thicker and wider strips vortex walls have lower energy. The associated phase diagram is now well established and often used to predict the low-energy magnetic configuration in a given magnetic nanostructure. However, besides the transverse and vortex walls, we find numerically that another type of wall exists in permalloy nanostrips. This third type of DW is characterised by a three-dimensional, flux closure micromagnetic structure with an unusual length and three internal degrees of freedom. Magnetic imaging on lithographically-patterned permalloy nanostrips confirms these predictions and shows that these DWs can be moved with an external magnetic field of about 1 mT. An extended phase diagram describing the regions of stability of all known types of DWs in permalloy nanostrips is provided.

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“…Furthermore, since dm z /dx is no longer 0, the terms in the LLG equation (1) containing dm/dx gain additional character. The adiabatic STT term has the wellknown effect of propagating the domain walls [16], which in the case of bound domain walls means they merely shift along the nanowire. The nonadiabatic term has the more interesting effect of rotating the magnetization counterclockwise in the left domain wall and clockwise in the right one.…”

Section: Discussionmentioning

confidence: 99%

In-line spin-torque nano-oscillators in perpendicularly magnetized nanowires

et al. 2016

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We propose a scheme for an in-line spin-torque nano-oscillator (iSTNO) composed of a single nanowire. The oscillating element is an in-plane magnetized region of an otherwise out-of-plane magnetized nanowire, which supports a spin-wave mode. Analytical exploration reveals that the nonadiabatic spin-transfer torque can cancel out the damping and thus induce sustained precession in response to a direct current. Moreover, it predicts that the frequency scales linearly with current and that the wave vector depends only on geometry. Simulations with single iSTNO cells confirm that oscillations occur, and simulations with two iSTNO cells show that they frequency lock to each other roughly in antiphase, even with mismatches in geometry. iSTNO devices can be easily fabricated by irradiating regions of a perpendicular magnetic anisotropy nanowire with ions, do not require an external field, inherently support multiple iSTNOs, and thus form an attractive alternative STNO.

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Current Induced Domain‐wall Motion in Magnetic Nanowires

Cited by 17 publications

References 171 publications

Dependence of domain wall pinning potential landscapes on domain wall chirality and pinning site geometry in planar nanowires

Dependence of domain wall pinning potential landscapes on domain wall chirality and pinning site geometry in planar nanowires

Third type of domain wall in soft magnetic nanostrips

In-line spin-torque nano-oscillators in perpendicularly magnetized nanowires

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