Current-Induced Magnetic Switching in an L10 FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque

Dong, Kaifeng; Sun, Chao; Zhu, Linghui; Jiao, Yu Yong; Tao, Ying; Hu, Xin; Li, Ruofan; Zhang, Shuai; Guo, Zhe; Luo, Shijiang; Yang, Xiaofei; Li, Shaoping; You, Long

doi:10.1016/j.eng.2021.09.018

Cited by 6 publications

(3 citation statements)

References 23 publications

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“…GdFeCo can thus generate efficient spin currents and the different symmetries allow this material to be used in a wide variety of devices for spintronics. For instance, the SHE spin current can generate self‐torque [ 10 ] and can be used for the electrical switching of the magnetization, as shown in epitaxial FePt [ 44 ] or CoTb. [ 45 ] Also, the total spin current (SAHE + SHE) can be used to induce a torque on another magnetic layer or for the manipulation of skyrmions.…”

Section: Discussionmentioning

confidence: 99%

Ferrimagnet GdFeCo Characterization for Spin‐Orbitronics: Large Field‐Like and Damping‐Like Torques

Damas

Anadón

Céspedes-Berrocal

et al. 2022

Physica Rapid Research Ltrs

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estimated from spin-torque ferromagnetic resonance (ST-FMR). We show that the overall damping-like (DL) and field-like (FL) effective fields as well as the associated spin Hall angles can be reliably obtained by performing the dependence of ST-FMR by an added dc current. The sum of the spin Hall angles for both the spin Hall effect (SHE) and the spin anomalous Hall effect (SAHE) symmetries are: 𝜃 𝐷𝐿 𝑆𝐴𝐻𝐸 + 𝜃 𝐷𝐿 𝑆𝐻𝐸 = −0.15 ± 0.05 and 𝜃 𝐹𝐿 𝑆𝐴𝐻𝐸 + 𝜃 𝐹𝐿 𝑆𝐻𝐸 = 0.026 ± 0.005. From the symmetry of ST-FMR signals we find that 𝜃 𝐷𝐿 𝑆𝐻𝐸 is positive and dominated by the negative 𝜃 𝐷𝐿 𝑆𝐴𝐻𝐸 . The present study paves the way for tuning the different symmetries in spin conversion in highly efficient ferrimagnetic systems.

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Section: Discussionmentioning

confidence: 99%

Ferrimagnet GdFeCo Characterization for Spin‐Orbitronics: Large Field‐Like and Damping‐Like Torques

Damas

Anadón

Céspedes-Berrocal

et al. 2022

Physica Rapid Research Ltrs

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“…[ 182 ] Dong et al reported the magnetization switching in the same material at a slightly reduced current density of ≈1.3–1.4 × 10 11 A m −2 . [ 183 ] However, an additional symmetry‐breaking field of 1000 Oe was required in this study. Zheng et al studied the self‐SOT‐induced switching in relatively thin (3 nm) L 1 0 ‐FePt films and observed the switching for J = 2 × 10 11 A m −2 (and a co‐current symmetry‐breaking field of 500 Oe).…”

Section: Spin–orbit Torquementioning

confidence: 99%

Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective

Maddu

Kumar

Bhatti

et al. 2023

Physica Rapid Research Ltrs

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With the advent of the Big Data era, neuromorphic computing (NC) (also known as brain‐inspired computing) has gained a lot of research interest. Spintronic devices are the emerging candidates for implementing the NC due to their intrinsic nonvolatility, extremely high endurance, low‐power consumption, and complementary metal‐oxide compatibility. Many research groups have proposed various NC architectures based on spintronic devices. Herein, a collective survey of different spintronic‐based approaches is given for NC. The reviewed approaches include the progress of stochastic magnetic tunnel junction (MTJ) devices, spin‐torque nano‐oscillator, spin‐Hall nano‐oscillator, domain walls, and skyrmion devices. In all of these approaches, spin–orbit torque (SOT)‐based magnetization control, which is achieved via spintronics heterostructures, plays a significant role. Various heterostructures of heavy metal and ferromagnetic layers that have been proposed are reviewed for generating SOT. In addition, the phenomena and materials involved in the generation of orbital torque are summarized due to the orbital Hall effect (OHE), which has recently gained researchers’ attention. Finally, an outlook on the opportunities and challenges for spintronic‐based NC hardware is provided, shedding light on its great potential for artificial intelligence (AI) applications.

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“…Many studies have been conducted in this area, and it has been discovered that symmetry breaking is an important factor in realizing single-layer switching via the SOT effect. For now, spin current can be generated in single-layer (Ge,Mn)As, , (Ge,Mn)Te, GdFeCo, CoTb, , FePt, − and CoPt − films with global or local structure asymmetry, and current-induced magnetization switching of perpendicular magnetization would be carried out. Recently, the field-free SOT switching based on the CoPt single-layer structure has been extensively studied.…”

Section: Introductionmentioning

confidence: 99%

Field-Free Magnetization Switching in A1 CoPt Single-Layer Nanostructures for Neuromorphic Computing

Yang

Zuo

Tao

et al. 2023

ACS Appl. Nano Mater.

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Current-induced field-free magnetization switching in single-layer films has been widely investigated for the application of spin−orbit torque (SOT) drivers in low-power, high-density, and nano-sized memory. In this paper, we report field-free SOT switching with threefold angle dependence in A1 disordered singlelayer CoPt using the MgO (111) substrate. It is found that the magnetization could not switch in the absence of an external inplane magnetic field when the current was flowing in the direction of the mirror symmetry high-symmetry axis ([11−2]). While along the direction of the low-symmetry axis ([1−10]) which destroyed the mirror symmetry to the greatest extent, field-free switching could be performed, and the switching ratio was up to 30%. This was mainly attributed to the composition gradient-induced in-plane inversion asymmetry and the low symmetry at the interface of Co/Pt broken out-of-plane inversion. Furthermore, CoPt devices with nanoscale thickness exhibited stable multistate magnetic switching behavior without an external magnetic field, and simultaneously nonlinear synaptic characteristics were obtained. A neural network was established, in which the synaptic weights between the hidden layer and the output layer are updated by using the resistance state of SOT synaptic devices, and the network could achieve about 90.54% recognition accuracy when applied to MNIST's handwritten digital dataset. This work confirmed that a field-free SOT switch could be realized in single-layer CoPt, which provided theoretical guidance and data support for spin devices.

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Current-Induced Magnetic Switching in an L10 FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque

Cited by 6 publications

References 23 publications

Ferrimagnet GdFeCo Characterization for Spin‐Orbitronics: Large Field‐Like and Damping‐Like Torques

Ferrimagnet GdFeCo Characterization for Spin‐Orbitronics: Large Field‐Like and Damping‐Like Torques

Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective

Field-Free Magnetization Switching in A1 CoPt Single-Layer Nanostructures for Neuromorphic Computing

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