2003
DOI: 10.1103/physrevlett.91.067203
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Current-Induced Magnetization Reversal in High Magnetic Fields inCo/Cu/CoNanopillars

Abstract: Current-induced magnetization dynamics in Co/Cu/Co trilayer nanopillars (∼100 nm in diameter) have been studied experimentally at low temperatures for large applied fields perpendicular to the layers. At 4.2 K an abrupt and hysteretic increase in resistance is observed at high current densities for one polarity of the current, comparable to the giant magnetoresistance (GMR) effect observed at low fields. A micromagnetic model, that includes a spin-transfer torque, suggests that the current induces a complete r… Show more

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Cited by 144 publications
(113 citation statements)
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References 22 publications
(42 reference statements)
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“…The reversal process was realized when a reversal current density over J c APS→PS = 6.0ϫ 10 7 A/cm 2 ͑APS→ PS͒ was applied. It is quite remarkable that without explicitly fitting to experimental measurements, our predicted threshold current density shows an excellent agreement with experimentally measured values 4,5,9 ranging from 10 7 to 10 8 A/cm 2 . A positive current density favors the parallel alignment while a negative one leads to an antiparallel configuration.…”
Section: A Magnetization Switching and The Role Of Anisotropy And Desupporting
confidence: 64%
See 1 more Smart Citation
“…The reversal process was realized when a reversal current density over J c APS→PS = 6.0ϫ 10 7 A/cm 2 ͑APS→ PS͒ was applied. It is quite remarkable that without explicitly fitting to experimental measurements, our predicted threshold current density shows an excellent agreement with experimentally measured values 4,5,9 ranging from 10 7 to 10 8 A/cm 2 . A positive current density favors the parallel alignment while a negative one leads to an antiparallel configuration.…”
Section: A Magnetization Switching and The Role Of Anisotropy And Desupporting
confidence: 64%
“…Under sufficiently high current density, spin-wave excitations are stimulated, or the magnetization of a nanoscale magnetic film can be switched. The role of STT in magnetization switching has been verified by numerous experiments in spin-valve nanopillars, [3][4][5][6][7][8][9][10] magnetic nanowires, 11,12 point-contact geometry, [13][14][15] and magnetic tunnel junctions. [16][17][18] Compared with the conventional approach to switching magnetization using a magnetic field generated by an external current line, the applications of current-induced magnetization switching ͑CIMS͒ in a magnetic random access memory ͑MRAM͒ have the advantage of large storage density, high speed, low energy consumption, and avoidance of cross writing.…”
Section: Introductionmentioning
confidence: 99%
“…This ground breaking concept known as spin transfer, relies on the local interaction between a spin polarized current and the background magnetization of a ferromagnet. Spin transfer induced magnetization dynamics has been recently demonstrated experimentally in a wide variety of material systems and is rapidly reaching device maturity 3,4,5,6,7,8,9,10,11,12,13 . Furthermore, direct measurements of the magnetization dynamics 14,15,16 have shed light on the fundamental mechanism of spin transfer.…”
mentioning
confidence: 99%
“…The polarization degree depends on the magnetization component of the PL normal to the film plane, and the magnetization is proportional to the applied field. Thus, the onset current has an inverse dependence with the applied magnetic field at low fields, as reported in several experimental studies [19,20,23,29]. Chung et al [23] recently used an expression for the onset current as a function of the field that accounts for the effect of a PL that is not aligned with the FL.…”
Section: Resultsmentioning
confidence: 90%