Current-induced magnetization reversal in nanopillars with perpendicular anisotropy

Mangin, Stéphane; Ravelosona, D.; Katine, J. A.; Fullerton, Eric E.

doi:10.1109/intmag.2006.375414

Cited by 76 publications

(92 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…the saturation magnetization is 4 Â 10 5 A m À 1 , the coercivity is 0.1 T and the remanent magnetization is approximately the same as the saturation magnetization. We insert a thin Co/Ni layer between [Co/Pt] and Cu layers to minimize spin scattering by the Pt layer 5 . We chose a Cu layer as the spin accumulation layer because of its relatively long spin diffusion length 36 .…”

Section: Discussionmentioning

confidence: 99%

“…Conventionally, spin currents are generated by passing electrical currents through ferromagnetic materials [1][2][3][4][5] . Recently, much effort has been expended to understand the generation of spin currents by thermal gradients [6][7][8][9][10][11][12][13][14] .…”

mentioning

confidence: 99%

“…Third, we measure the demagnetization-induced spin transfer torque (STT) using an NM/FM1/NM/FM2 structure where the second magnetic layer FM2 has magnetization that is perpendicular to FM1. Previously, the generation of STT has been realized by an electric field [1][2][3][4][5] or a temperature-gradient 6,7 applied across the sample. Here we show an alternative method for generating STT using ultrafast demagnetization.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Spin current generated by thermally driven ultrafast demagnetization

Choi

Min

Lee³

et al. 2014

Nat Commun

196

203

View full text Add to dashboard Cite

Spin current is the key element for nanoscale spintronic devices. For ultrafast operation of such nano-devices, generation of spin current in picoseconds, a timescale that is difficult to achieve using electrical circuits, is highly desired. Here we show thermally driven ultrafast demagnetization of a perpendicular ferromagnet leads to spin accumulation in a normal metal and spin transfer torque in an in-plane ferromagnet. The data are well described by models of spin generation and transport based on differences and gradients of thermodynamic parameters. The temperature difference between electrons and magnons is the driving force for spin current generation by ultrafast demagnetization. On longer timescales, a few picoseconds following laser excitation, we also observe a small contribution to spin current by a temperature gradient and the spin-dependent Seebeck effect.

show abstract

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Spin current generated by thermally driven ultrafast demagnetization

Choi

Min

Lee³

et al. 2014

Nat Commun

196

203

View full text Add to dashboard Cite

show abstract

“…It is well known that the τ phase of term that the spin torque needs to overcome in the in-plane case, while it doesn't contribute to the thermal stability [37]. Therefore, less current would be required to switch the free layer with perpendicular anisotropy.…”

Section: Introductionmentioning

confidence: 99%

Structural and Material Exploration of Magnetic Tunnel Junctions

Chen¹

View full text Add to dashboard Cite

“…Racetrack Memory (RM) (also commonly known as a domain-wall memory) is another example of an emerging technology for storage; it is based on the current-induced domain wall motion in magnetic nanowires [108,109,110]. A hybrid cell made of a CMOS circuit and a RM has the potential to provide substantial advantages over a flash memory for non-volatile storage.…”

Section: Introductionmentioning

confidence: 99%

Design and modeling of nonvolatile memories by resistive switching elements

Junsangsri¹

View full text Add to dashboard Cite

With the continued scaling in the nano ranges, the technology roadmap predicted by Moore's Law is becoming difficult to meet. So-called emerging technologies have been widely reported to supersede or complement CMOS. This type of design style is commonly referred to as "hybrid" because it exploits different characteristics of emerging technologies. This is very attractive for memories in which the modular (cell-based) organization of these systems is well suited to new technologies and innovative paradigms for design. This research presents new hybrid memory design which employ emerging technologies; such as memristor, phase change memory (PCM), programmable metallization cell (PMC), and racetrack memory (RM); and CMOS. By introduced new HSPICE macromodel of these emerging technologies and their memory applications such as the nonvolatile memory cell, CAM, TCAM, NVSRAM, and crossbar array, hybrid nonvolatile memory cells are generated. With its nonvolatile storage element, fast switching time, low power consumption, and good scalability, the hybrid memory cell of emerging technologies and CMOS would be one of the most promising candidates for the next generation of the nonvolatile memory.iii ACKNOWLEDGEMENTS

show abstract

Current-induced magnetization reversal in nanopillars with perpendicular anisotropy

Cited by 76 publications

References 8 publications

Spin current generated by thermally driven ultrafast demagnetization

Spin current generated by thermally driven ultrafast demagnetization

Structural and Material Exploration of Magnetic Tunnel Junctions

Design and modeling of nonvolatile memories by resistive switching elements

Contact Info

Product

Resources

About