Current-induced magnetization switching in all-oxide heterostructures

Liu, Liang; Qin, Qing; Lin, Weinan; Li, Changjian; Xie, Qidong; He, Shan; Shu, Xinyu; Zhou, Chang; Lim, Zhishiuh; Yu, Jeffrey W.; Lü, Weijia; Li, Mengsha; Yan, Xiaobing; Pennycook, Stephen J.; Chen, Jingsheng

doi:10.1038/s41565-019-0534-7

Cited by 180 publications

(154 citation statements)

References 29 publications

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“…In addition, the correlated d electrons of B cations give rise to strongly coupled physical properties. Here we studied epitaxial heterostructures of the 3d TMOs La1-xSrxMnO3 that show rich physics and the 5d TMO SrIrO3, which has attracted recent research interests to explore exotic properties arising from spin-orbit coupling [20][21][22][23][24][25][26] . To elucidate the role of B-site cation ordering, we synthesized superlattices comprised of La0.2Sr0.8MnO3 and SrIrO3 ([(La0.2Sr0.8MnO3)m(SrIrO3)m]n with m=1, 2, 4), in-situ monitored by using reflection high-energy electron diffraction (RHEED) ( Supplementary Fig.…”

Section: Synthesis Of Digital Superlattices and Reference Filmsmentioning

confidence: 99%

Emergent electric field control of phase transformation in oxide superlattices

Wang

Erve

et al. 2020

Nat Commun

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Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides (TMOs) provide many potential candidates that present a strong response under electrolytic gating. However, very few show a reversible structural transformation at roomtemperature. Here, we report the realization of a digitally synthesized TMO that shows a reversible, electric-field-controlled transformation between distinct crystalline phases at room-temperature. In superlattices comprised of alternating one-unit-cell of SrIrO 3 and La 0.2 Sr 0.8 MnO 3 , we find a reversible phase transformation with a 7% lattice change and dramatic modulation in chemical, electronic, magnetic and optical properties, mediated by the reversible transfer of oxygen and hydrogen ions. Strikingly, this phase transformation is absent in the constituent oxides, solid solutions and larger period superlattices. Our findings open up a new class of materials for voltagecontrolled functionality.

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Section: Synthesis Of Digital Superlattices and Reference Filmsmentioning

confidence: 99%

Emergent electric field control of phase transformation in oxide superlattices

Wang

Erve

et al. 2020

Nat Commun

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“…Compared with space-inversion-symmetry-breaking Weyl semimetals 30 , time-reversal-symmetry (TRS)-breaking ones are thought to be more suitable for spintronic applications 3 , 31 , 32 . For example, since the distribution of Weyl nodes in magnets is determined by the spin texture 1 , this distribution is expected to be controlled by the magnetization switching technique 33 , 34 . Recent angle-resolved photoemission spectroscopy (ARPES) studies have found experimental evidence for the electronic structure of magnetic Weyl semimetals Co 3 Sn 2 S 2 2 , 3 and Co 2 MnGa 4 , such as the presence of bulk Weyl points with linear dispersions and surface Fermi arcs.…”

Section: Introductionmentioning

confidence: 99%

Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide

et al. 2020

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Magnetic Weyl semimetals have novel transport phenomena related to pairs of Weyl nodes in the band structure. Although the existence of Weyl fermions is expected in various oxides, the evidence of Weyl fermions in oxide materials remains elusive. Here we show direct quantum transport evidence of Weyl fermions in an epitaxial 4d ferromagnetic oxide SrRuO3. We employ machine-learning-assisted molecular beam epitaxy to synthesize SrRuO3 films whose quality is sufficiently high to probe their intrinsic transport properties. Experimental observation of the five transport signatures of Weyl fermions—the linear positive magnetoresistance, chiral-anomaly-induced negative magnetoresistance, π phase shift in a quantum oscillation, light cyclotron mass, and high quantum mobility of about 10,000 cm2V−1s−1—combined with first-principles electronic structure calculations establishes SrRuO3 as a magnetic Weyl semimetal. We also clarify the disorder dependence of the transport of the Weyl fermions, which gives a clear guideline for accessing the topologically nontrivial transport phenomena.

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“…Although the exact mechanism remains unclear ( Akyol et al., 2015 ), a gradient of the PMA or the saturation magnetization was thought to be responsible for the deterministic SOT switching. In other cases, the easy axis of the PMA-FM was tilted away from the out-of-plane direction either by annealing the sample under an in-plane magnetic field ( Kong et al., 2019 ) or by epitaxially depositing the SrIrO 3 /SrRuO 3 bilayer with tilted magnetocrystalline anisotropy on a (001)-oriented SrTiO 3 substrate ( Liu et al., 2019c ). Among them, each engineering methodology warrants sufficient asymmetry in the PMA for the field-free SOT-induced magnetization switching.…”

Section: Key Challenges For Spin-orbitronic Devicesmentioning

confidence: 99%

Prospect of Spin-Orbitronic Devices and Their Applications

et al. 2020

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Summary Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.

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Current-induced magnetization switching in all-oxide heterostructures

Cited by 180 publications

References 29 publications

Emergent electric field control of phase transformation in oxide superlattices

Emergent electric field control of phase transformation in oxide superlattices

Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide

Prospect of Spin-Orbitronic Devices and Their Applications

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