Current-induced metal–insulator transition in VOx thin film prepared by rapid-thermal-annealing

Cho, Choong-Rae; Cho, SungIl; Sidorkin, Vadim; Jung, Ranju; Yoo, In-Kyeong

doi:10.1016/j.tsf.2005.08.241

Cited by 56 publications

(18 citation statements)

References 13 publications

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“…After this, VO 2 stays in metal state as long as the current density is high enough, and finally returns to semiconducting state when the source voltage is decreased back to value of 3V. Similar results have been reported by several groups [6,7]. Same data are shown in Fig.…”

Section: Resultssupporting

confidence: 87%

Electrical and optical properties of metal-insulator-transition VO2 thin films

et al. 2008

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Vanadium dioxide thin films were deposited using in situ pulsed laser deposition technique on a-, c-, and r-plane Al 2 O 3, and MgO(100) substrates. Microstructure of the films was varied between epitaxial VO 2 , polycrystalline VO 2 , mixtures of VO 2 and V 6 O 13 with VO 2 as the main phase, and mixtures of VO 2 and V 6 O 13 with V 6 O 13 as the main phase by controlling the deposition oxygen partial pressure. Detailed XRD, SPM, and FESEM measurements were performed in order to analyze the structure of the films. Resistivity as a function of temperature, current-voltage characteristics in electric current induced Joule heating transition process, and the optical transmittance both in insulator and metal states were measured. MIT effect led to 10 3 -10 5 change in resistivity with varying transition temperature and hysteresis loop widths. The largest and the steepest transitions were found in the films with polycrystalline microstructure deposited at higher oxygen pressures. Epitaxial films had 2.5 times higher insulator state conductivity than polycrystalline films, which lead to a clearly smaller switching powers in MIT effect generated by Joule heating. However, the optical properties in both states were not considerable affected by conductivity or microstructure properties. The relationships between the microstructure, electrical and optical properties, as well as MIT switching effect together its dynamics in the films are discussed.

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Section: Resultssupporting

confidence: 87%

Electrical and optical properties of metal-insulator-transition VO2 thin films

et al. 2008

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“…Including VO 2 , various metal oxide thin films show such electric-field-induced threshold switching with negative differential resistance. [3,[6][7][8][9][10] In contrast to a diode, the metal-insulator-transition based devices such as field-induced threshold switching do not require formation of p-n junctions for switch devices. Even more remarkable characteristics are that threshold switching oxide devices show very near ideal behaviors for non-ohmic devices, turning nearly completely off for bias below V th and having negligible resistance for bias greater than V th .…”

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confidence: 99%

Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

et al. 2007

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Nowadays flash memory is one of the most frequently used nonvolatile memories in electronic devices. However, since flash memory is based on Si transistors with floating gates which can store electronic charges, it has basic limitations in its speed and density. It takes longer than 1 lsec for electronic charges to be stored in a floating gate in one cell of flash memory. In addition, we'll reach density limitation in flash memory in the near future by conventional scaling methods, such as decrease in gate length or increase in dielectric constant of the gate oxide, which are commonly applied to Sibased 2-dimensional devices. Thus, in order to overcome the limitations of flash memory, we require a new nonvolatile memory which is not based on Si devices with electronic charge storing phenomena. Here we introduce a next generation nonvolatile memory consisting of two oxide resistors, NiO and VO 2 , where the former is a memory element storing data by utilizing so called bi-stable resistance switching and the latter is a switch element controlling access using the related threshold switching. Since the memory only utilizes resistance switching behaviors of the two oxide resistors, writing and reading times are around several 10s of ns. In addition, it overcomes density limitations by its compatibility with 3-dimensional stack structures due to its low processing temperature lower than 300°C. High performance tests show the feasibility of a universal memory which has advantages of both flash and static random access memories.Si-based flash memory has become the standard for nonvolatile memory which does not lose information in the absence of an external bias. Nonetheless it faces several barriers as cell size is reduced beyond the sub-micrometer region (currently having realized a 40 nm pattern for 32 gigabit NAND flash memory) [1] due to charge leakage across the tunnel oxide. In addition, it needs a little longer time (> 1 ls) to write information by storing charges in a floating gate of flash memory. The efforts of the semiconductor industries have been focused not only on developing scaling methods or modifying device structures for Si-based flash memories [1] but on finding a next generation memory using materials which can circumvent the fundamental limits of Si. The goal of a next generation memory is both to surpass flash memory for nonvolatile memory applications and to realize a universal memory which combines the advantages of nonvolatile slow memory such as flash memory and volatile fast memory such as static random access memory. In order to accomplish this, a class of materials and structures which have easy scalability and rapid programming speed in addition to nonvolatility and low power consumption must be developed. In general, nonvolatile memory consists of a memory element with bi-stable states under zero bias and a switch element with resistance controlled by external bias. The memory element stores the information and the switch element controls access to a specific memory element. Several gro...

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“…The vanadium dioxide (VO 2 ) film is a kind of metal oxide with insulator metal phase transition. It can be changed from insulating state to metallic state under the action of light, heat, and stress . The magnitude of the VO 2 can change 3 to 5 times; therefore, with phase change, the physical properties of VO 2 thin films also occur reversible mutation .…”

Section: Introductionmentioning

confidence: 99%

“…It can be changed from insulating state to metallic state under the action of light, heat, and stress. 16,17 The magnitude of the VO 2 can change 3 to 5 times; therefore, with phase change, the physical properties of VO 2 thin films also occur reversible mutation. [18][19][20][21][22][23][24] In this paper, the reversible phase transition characteristics of VO 2 are used to achieve the adjustable characteristics of absorber.…”

Section: Introductionmentioning

confidence: 99%

Development of a tunable terahertz absorber based on temperature control

Liu

2019

Micro & Optical Tech Letters

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Metamaterial structure‐based terahertz absorbers all are passive, once the preparation is complete, their absorption properties are also determined unable to adapt to the increasingly complex electromagnetic environment. In this paper, a kind of phase change film‐based tunable terahertz metamaterial absorber is proposed. And on the basis of current three‐layer type terahertz absorber on present metamaterial structure, a layer of vanadium dioxide (VO2) phase change film is added to change the conductivity of VO2 by controlling ambient temperature, so as to trigger the insulator metal transition characteristics of VO2 film, which can control the absorption rate of terahertz metamaterial absorber. Theoretically, design scheme in this paper has 80% modulation depth to the amplitude of absorption. That is, tunable terahertz electromagnetic absorber has potential application value in electromagnetic stealth in terahertz band, radiation detectors, and broadband communication fields.

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Current-induced metal–insulator transition in VOx thin film prepared by rapid-thermal-annealing

Cited by 56 publications

References 13 publications

Electrical and optical properties of metal-insulator-transition VO2 thin films

Electrical and optical properties of metal-insulator-transition VO2 thin films

Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Development of a tunable terahertz absorber based on temperature control

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