Current-induced structural modification of silicon-on-insulator nanocircuits

Nicolas, Clément; Francinelli, A.; Tonneau, D.; Scotto, Ph.; Jandard, F.; Dallaporta, H.; Safarov, V. I.; Fraboulet, D.; Gautier, J.

doi:10.1063/1.1561573

Cited by 13 publications

(7 citation statements)

References 16 publications

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“…4f ). However, further scaling these diodes should induce unsustainable large current densities (the typical upper range of failure current limitation is ∼3 × 10 8 A cm −2 ) 79 80 , unless a small oxide layer at the contact interface increases the resistance 81 . A maximum current density imposes R S to scale with A , leading to a saturation of f T at d below 50 nm ( Fig.…”

Section: Discussionmentioning

confidence: 99%

“…C j /A= 6.2 μF cm −2 from refs 77 , 78 and C mol / A =0.9–1.4 μF cm −2 based on a dielectric constant of 2–3 for the monolayer and a monolayer thickness of 1.9 nm (the length of the molecule). A current density failure limitation of 3 × 10 8 A cm −2 from refs 79 , 80 , induces a saturation of f T in the graph. Measured R mol at +1 V and estimated f T are also indicated.…”

Section: Figurementioning

confidence: 97%

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A 17 GHz molecular rectifier

Trasobares¹,

Vuillaume²,

Théron³

et al. 2016

Nat Commun

121

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Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable ultimate scaling to be reached. However, so far, functional molecular devices have only been demonstrated at low frequency. Here, we demonstrate molecular diodes operating up to 17.8 GHz. Direct current and radio frequency (RF) properties were simultaneously measured on a large array of molecular junctions composed of gold nanocrystal electrodes, ferrocenyl undecanethiol molecules and the tip of an interferometric scanning microwave microscope. The present nanometre-scale molecular diodes offer a current density increase by several orders of magnitude compared with that of micrometre-scale molecular diodes, allowing RF operation. The measured S11 parameters show a diode rectification ratio of 12 dB which is linked to the rectification behaviour of the direct current conductance. From the RF measurements, we extrapolate a cut-off frequency of 520 GHz. A comparison with the silicon RF-Schottky diodes, architecture suggests that the RF-molecular diodes are extremely attractive for scaling and high-frequency operation.

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Section: Discussionmentioning

confidence: 99%

Section: Figurementioning

confidence: 97%

A 17 GHz molecular rectifier

Trasobares¹,

Vuillaume²,

Théron³

et al. 2016

Nat Commun

121

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“…10 Magnetoresistance for the P-donor line samples was measured in a perpendicular magnetic field from 0 to 7 T at 0.3 K. Figure 3 compares the strong negative resistance peak at B = 0 for an unpatterned P ␦-layer with results for the 50 and 95 nm lines. 10 Magnetoresistance for the P-donor line samples was measured in a perpendicular magnetic field from 0 to 7 T at 0.3 K. Figure 3 compares the strong negative resistance peak at B = 0 for an unpatterned P ␦-layer with results for the 50 and 95 nm lines.…”

Section: P-donor Linesmentioning

confidence: 99%

Nanoscale electronics based on two-dimensional dopant patterns in silicon

Shen¹,

Kline²,

Schenkel³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Electron-beam lithography with aromatic self-assembled monolayers on silicon surfacesFabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted contact arrays provide external leads for scanning tunneling microscope (STM)-defined dopant patterns. The STM's low energy electron beam removes hydrogen from H terminated Si(100) surfaces for selective adsorption of PH 3 precursor molecules, followed by room temperature Si overgrowth and 500°C rapid thermal anneal to create activated P-donor patterns in contact with As + -implanted lines. Electrical and magnetoresistance measurements are reported here on 50 and 95 nm-wide P-donor lines, along with Ga-acceptor wires created by focused ion beams, as a means for extending Si device fabrication toward atomic dimensions.

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“…The technique provides ultra-small silicon oxide nanostructures with a lateral size of about 5 nm and a height in the 1-3 nm range. Local oxidation is a robust, reliable, and flexible lithographic method for the fabrication of nanoscale structures and devices [4][5][6][7][8][9]. However, the sequential character of the AFM limits the technological applications of the method.…”

Section: Introductionmentioning

confidence: 99%

Large area nanoscale patterning of silicon surfaces by parallel local oxidation

Losilla¹,

Martínez²,

García³

2009

Nanotechnology

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The homogeneity and the reproducibility of parallel local oxidation have been improved by introducing a thin film of polymethylmethacrylate (PMMA) between the stamp and the silicon surface. The flexibility of the polymer film enables a homogeneous contact of the stamp with the silicon surface to be achieved. The oxides obtained yield better aspect ratios compared with the ones created with no PMMA layer. The pattern is formed when a bias voltage is applied between the stamp and the silicon surface for 1 min. The patterning can be done by a step and repeat technique and is reproducible across a centimetre length scale. Once the oxide nanostructures have been created, the polymer is removed by etching in acetone. Finally, parallel local oxidation is applied to fabricate silicon nanostructures and templates for the growth of organic molecules.

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Current-induced structural modification of silicon-on-insulator nanocircuits

Cited by 13 publications

References 16 publications

A 17 GHz molecular rectifier

A 17 GHz molecular rectifier

Nanoscale electronics based on two-dimensional dopant patterns in silicon

Large area nanoscale patterning of silicon surfaces by parallel local oxidation

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