1999
DOI: 10.1126/science.285.5429.867
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Current-Induced Switching of Domains in Magnetic Multilayer Devices

Abstract: Current-induced switching in the orientation of magnetic moments is observed in cobalt/copper/cobalt sandwich structures, for currents flowing perpendicularly through the layers. Magnetic domains in adjacent cobalt layers can be manipulated controllably between stable parallel and antiparallel configurations by applying current pulses of the appropriate sign. The observations are in accord with predictions that a spin-polarized current exerts a torque at the interface between a magnetic and nonmagnetic metal, … Show more

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Cited by 1,312 publications
(825 citation statements)
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“…We note that our data demonstrate an ultrafast transfer of angular momentum of longitudinal spin through a spin current on subpicosecond timescales. In contrast, previous works demonstrated spin-transfer torque, that is, a transfer of transverse angular momentum between noncollinear spins and a magnetic moment at microwave frequencies [30][31][32][33] , leading to important innovations such as spin-torque magnetic random access memory (RAM) for data storage, spin-torque oscillators for frequency-agile telecommunications, and spin-wave interconnects for spin-based logic. Similarly, we anticipate that superdiffusive spin transfer, which has a considerably larger magnetic moment, can find applications in moving domain walls, switching magnetic nano-elements on subpicosecond timescales or in spin-based electronics operating in the Terahertz frequency range.…”
Section: Discussionmentioning
confidence: 96%
“…We note that our data demonstrate an ultrafast transfer of angular momentum of longitudinal spin through a spin current on subpicosecond timescales. In contrast, previous works demonstrated spin-transfer torque, that is, a transfer of transverse angular momentum between noncollinear spins and a magnetic moment at microwave frequencies [30][31][32][33] , leading to important innovations such as spin-torque magnetic random access memory (RAM) for data storage, spin-torque oscillators for frequency-agile telecommunications, and spin-wave interconnects for spin-based logic. Similarly, we anticipate that superdiffusive spin transfer, which has a considerably larger magnetic moment, can find applications in moving domain walls, switching magnetic nano-elements on subpicosecond timescales or in spin-based electronics operating in the Terahertz frequency range.…”
Section: Discussionmentioning
confidence: 96%
“…The interaction of spin polarized current with magnetization gives rise to various fascinating spin-torque effects such as magnetization reversal of nanomagnets in junction configurations [1][2][3][4][5] and current-induced domain wall motion [6][7][8][9][10][11]. The interest in these effects is not only theoretically motivated, but also for their expected central role in novel spintronics devices, as they offer efficient and scalable methods to control magnetic configurations on a nanometer scale.…”
Section: Introductionmentioning
confidence: 99%
“…What might be happening is that the DC current sent through the spin valve under relatively high fields drives the precession of the magnetization of one of the layers. This was among the first pieces of evidence for the effect of spin polarized current on magnetization [16][17][18], and can also be observed in our electro-deposited samples [19]. This precession induces further dissipative processes that add a contribution to the effective resistance that could contribute to the TGV response [20].…”
Section: Tgv Of Spin Valvesmentioning
confidence: 96%