Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

Guter, W.; Schöne, J.; Philipps, Simon P.; Steiner, Marc; Siefer, Gerald; Wekkeli, A.; Welser, E.; Oliva, E.; Bett, Andreas W.; Dimroth, Frank

doi:10.1063/1.3148341

Cited by 665 publications

(355 citation statements)

References 14 publications

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“…In the most successful approach several solar cells using semiconductors with different energy gaps are connected in series in a multijunction or tandem device structure [2]. Most recently efficiencies exceeding 40% were realized with three junction solar cells under concentration [3,4]. A great disadvantage of this design is the complexity of the structure and the device fabrication process.…”

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confidence: 99%

Engineering the Electronic Band Structure for Multiband Solar Cells

et al. 2011

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Using the unique features of the electronic band structure of GaN x As 1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

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confidence: 99%

Engineering the Electronic Band Structure for Multiband Solar Cells

et al. 2011

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“…For example, a tunnel junction can reduce the resistance of a semiconductor laser [21,22]. Photovoltaic conversion efficiencies of up to 40% have been demonstrated by solar cells containing tunnel junctions of III-V semiconductors [23,24]. Structures such as a spin-injection light-emitting diode [25] and a tunnel-injection transit time effect diode (TUNNETT) [26][27][28][29] have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Ohno

Oyama

2012

Science and Technology of Advanced Materials

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In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm −2 . They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

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“…To further improve conversion efficiency, a conceptually straightforward way is to use a stack of cascaded multiple p-n junctions with bandgaps better matching to solar spectrum, such as GaAs-based multi-junction solar cell [12]. Record conversion efficiencies above 40% have been reported for multi-junction cells using concentrated sunlight [13][14][15]. Although substantial advances have been made in efficiency, the cost of power generation for solar cell is still higher than that for the conventional resource, such as coal, gas or oil.…”

Section: Introductionmentioning

confidence: 99%

Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications

Cao

et al. 2012

Nano-Micro Lett.

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Nanowire-based photovoltaic devices have the advantages over planar devices in light absorption and charge transport and collection. Recently, a new strategy relying on type-II band alignment has been proposed to facilitate efficient charge separation in core/shell nanowire solar cells. This paper reviews the type-II heterojunction solar cells based on core/shell nanowire arrays, and specifically focuses on the progress of theoretical design and fabrication of type-II ZnO/ZnSe core/shell nanowire-based solar cells. A strong photoresponse associated with the type-II interfacial transition exhibits a threshold of 1.6 eV, which demonstrates the feasibility and great potential for exploring all-inorganic versions of type-II heterojunction solar cells using wide bandgap semiconductors. Future prospects in this area are also outlooked.

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Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

Cited by 665 publications

References 14 publications

Engineering the Electronic Band Structure for Multiband Solar Cells

Engineering the Electronic Band Structure for Multiband Solar Cells

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications

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