Current mechanisms and 1/f noise in 8-12 &amp;amp;#181;m n&lt;sup&gt;+&lt;/sup&gt;on p (Hg,Cd)Te photodiodes

Briggs, R.J.; Marciniec, J.; Zimmermann, Peter; Sood, Apoorva

doi:10.1109/iedm.1980.189877

Cited by 2 publications

(5 citation statements)

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“…As mentioned above, we have simplified matters by neglecting the effect of g-r and tunnelling currents. For example, Briggs et al [2] and Chung et al [4] have assumed that the RA product is determined by g-r currents and, that in the absence of such currents, RA is independent of P /A. However, Briggs [1] considers a diffusion-dominated RA and obtains different results, which agree with our numerical results, as will be discussed later.…”

Section: Modelsupporting

confidence: 84%

“…There have been several studies, both experimental and theoretical, of the variable-area diode array (VADA) [1][2][3][4][5][6][7][8][9][10][11][12] as a means by which to characterize HgCdTe photodiode array technology. Primarily, the focus has been on the resistancearea (RA) product variation across the VADA, but some of these studies have also involved the quantum efficiency, η.…”

Section: Introductionmentioning

confidence: 99%

“…A problem that is peculiar to HgCdTe photodiodes is the considerable scatter in the 1/RA versus P /A plots due to random variations in composition, diode active area, etc. Most results have been fitted to a quadratic variation in P /A, and there have been attempts to numerically and/or theoretically model [2][3][4][5][6][7][8][9][10][11][12] this behaviour.…”

Section: Introductionmentioning

confidence: 99%

“…We have tried to fit our results to empirical forms without any preconceptions. We have then compared our results with other empirical and theoretical expressions that have been used [2][3][4][5][6][7][8][9][10][11][12] to account for these variations. We show that there are additional terms that need to be introduced into the expression of Gopal [9], which comes closest to our values, to account for our numerically calculated results.…”

Section: Introductionmentioning

confidence: 99%

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Dependence of zero-bias resistance-area product and quantum efficiency on perimeter-to-area ratio in a variable-area diode array

Dhar

Gopal

2001

Semicond. Sci. Technol.

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The dependence of the zero-bias resistance-area (RA) product and the quantum efficiency (η) of variable-area diode arrays is numerically calculated by solving the diffusion equation in a cylindrical, three-dimensional geometry in the thick base approximation. The calculation is done for long-wavelength IR HgCdTe n + -on-p diffusion-limited photodiodes at 77 K. The inverse resistance-area product 1/(RA) and the square root of the quantum efficiency, η 1/2 , are plotted against the perimeter-to-area (P /A) ratio. The 1/RA results are fitted to a quadratic dependence on the P /A ratio. The dependence of the 1/RA on the minority carrier diffusion length, the junction depth and the surface recombination velocity (SRV) is evaluated. An empirical expression is proposed that largely accounts for the dependence of the coefficients of the quadratic on these parameters and is more general than those used in previous studies. The results are also in reasonable agreement with the results of Briggs, expressed in terms of the parameter f 3D , that are valid for zero junction depth and zero SRV. The slope of the quantum efficiency versus P /A plot, which is approximately a straight line, is related to an effective length L opt , that also depends on the diffusion length, junction depth, SRV and the absorption coefficient α. The parameter L opt varies as α 1/2 .

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Section: Modelsupporting

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Dependence of zero-bias resistance-area product and quantum efficiency on perimeter-to-area ratio in a variable-area diode array

Dhar

Gopal

2001

Semicond. Sci. Technol.

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“…[1][2][3][4] Si CMOS electronics with high packing densities and low power consumption generally meet requirements for on-focal-plane hybrid interfacing with IR detector arrays. Generally, IR photodiodes require a high degree of bias control and often employ a costly cooling apparatus to reduce detector dark currents and improve sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Buffered infrared detector array interfacing

Howard

White

1998

Opt. Eng

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New results from buffered interfacing techniques used with short-wavelength IR photodiode arrays at room temperature are presented and analyzed. Performance of linear Ge and InGaAs arrays is shown not to be limited by detector characteristics at room temperature, but instead by on-focal-plane hybrid interfacing electronics. Two key issues associated with Si complementary metal-oxide semiconductor (CMOS) interfacing circuitry are input offset voltage, which results in excessive dark currents, and input voltage noise with excessive 1/f characteristics. An analysis of white and 1/f noise generated by both detector and preamplifier is presented. Improved noise performance models give excellent agreement with experimental data. Proposed improvements in readout electronics will result in improved sensitivity and will relax costly cooling requirements associated with detectors.

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Current mechanisms and 1/f noise in 8-12 &#181;m n<sup>+</sup>on p (Hg,Cd)Te photodiodes

Cited by 2 publications

References 0 publications

Dependence of zero-bias resistance-area product and quantum efficiency on perimeter-to-area ratio in a variable-area diode array

Dependence of zero-bias resistance-area product and quantum efficiency on perimeter-to-area ratio in a variable-area diode array

Buffered infrared detector array interfacing

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