Current readout circuit using two-stage amplification method for 64-channel CNT arrays

Shin, Young-San; Lee, Seongsoo; Wee, Jae-Kyung

doi:10.1109/iscas.2012.6272155

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2018

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“…This large voltage range however is not compatible with ultra-low power bias and read-out circuits [19][20][21][22][23] and would render the ultra-low power argument for these materials void. Therefore, this study presents a novel sensor architecture and process flow, that significantly reduces the operating voltages of the device, without compromising previous achievements, such as the suppression of hysteresis or low power consumption.…”

Section: Introductionmentioning

confidence: 99%

Effect of varying gate distance on the threshold voltage shift in carbon nanotube field effect transistor gas sensors

Eberle

Roman

Hierold

2018

Microelectronic Engineering

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Suspended individual carbon nanotubes show great promise in use as gas sensors, as they are not only highly sensitive and selective, but can be operated at a few μW of power consumption. This work reports on a novel architecture and process flow to reduce the voltage range needed for a full sensor characterization to the values given by modern technology. The developed fast and flexible fabrication run yields CNTFET devices with varying gate distances, improving gate coupling up to 25 times to previous own studies. Devices with long gate distances (d g = 1.84 μm) show a 3.2-times improved signal to noise ratio (voltage shift upon gas adsorption over signal variation) when compared to short gate distance devices (d g = 0.24 μm).

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