Current Saturation Characteristics and Single-Pulse Short-Circuit Tests of Commercial SiC MOSFETs

Xing, Diang; Hu, Boxue; Yu, Susanna; Zhang, Yue; Liu, Tianshi; Salemi, Arash; Kang, Minseok; Wang, Jin; Agarwal, Anant

doi:10.1109/ecce.2019.8913178

Cited by 15 publications

(4 citation statements)

References 7 publications

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“…1200 V DMOSFET devices with planar gate were procured from two vendors (designated as C and E) to test their SCWT. 30,31) Twenty-five devices from each vendor were tested for SC, and the results are presented in Fig. 11.…”

Section: Resultsmentioning

confidence: 99%

Non-isothermal simulation of SiC DMOSFET short circuit capability

Nayak

Maddi

et al. 2022

Jpn. J. Appl. Phys.

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The Short Circuit (SC) capability is a crucial figure of merit for a power switching device in applications such as electrical vehicle (EV) traction inverters and chargers. SiC DMOSFETs are inferior to insulated gate bipolar transistors (IGBT) in terms of the SC protection time. In this work, the SC capability of a SiC DMOSFET is investigated through non-isothermal simulations and measurements. Its sensitivity to process-induced channel length variability has been examined. Its dependence on important device design parameters has been studied, revealing the JFET width as the most sensitive amongst them for optimizing the SC capability. Previously reported SC enhancement techniques that require added fabrication steps were corroborated.

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Section: Resultsmentioning

confidence: 99%

Non-isothermal simulation of SiC DMOSFET short circuit capability

Nayak

Maddi

et al. 2022

Jpn. J. Appl. Phys.

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“…This is not a problem for Si IGBT devices, but it is a challenge for SiC MOSFET devices. It has been reported that the typical short circuit withstand time (SCWT) for commercial SiC MOSFET devices is within 2-7 µs, and it is even shorter at elevated temperatures and voltages [12], [13]. Therefore, it is significant to investigate the failure mechanism under short circuit events so as to know the weakest location inside the device.…”

Section: Introductionmentioning

confidence: 99%

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Yu,

Jahdi,

Alatise

et al. 2023

IEEE Trans. Device Mater. Relib.

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The reliability of the SiC MOSFET has always been a factor hindering the device application, especially under high voltage and high current conditions, such as in the short circuit events. This paper experimentally reviews the failure mechanisms caused by destructive short circuit impulses, and investigates the degradation patterns of key electrical parameters under repetitive short circuit events. The impact of test parameters on the short circuit reliability of SiC MOSFET has been analyzed. Approaches to characterize the electrical-thermal-mechanical stress during the short circuit period and advanced test methods are highlighted. Finally, the constraints from the standpoint of both manufacturers and users have been presented, including comparison of current SiC MOSFET devices, reliability evaluation of parallel SiC MOSFET devices, reliability improvement of the chip, performance improvement of protection circuits, and reliability assessment of SiC MOSFET devices under application-representative stress.

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“…There are several papers that comprehend the performance and failure mechanisms of SiC MOSFETs under short circuit conditions, such as in [2][3][4]. In [5], the short circuit withstand time of 1.2 kV SiC MOSFETs was compared to that of 900 V silicon super-junction MOSFETs. The results showed higher performance in the SiC MOSFETs when energy density is used as a metric, however the SiC MOSFETs could not meet the 10 µs withstand time, unlike in the silicon devices.…”

Section: Introductionmentioning

confidence: 99%

Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

Mendy

Agbo

et al. 2021

Energies

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This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and threshold voltages (VTH). The results show that VTH variation is the most critical factor affecting reduced robustness of parallel devices under SC. The SC current conducted per device is shown to increase under parallel connection compared to single device measurements. VTH shift from bias–temperature–instability (BTI) is known to occur in SiC MOSFETs, hence this paper combines BTI and SC tests. The results show that a positive VGS stress on the gate before the SC measurement reduces the peak SC current by a magnitude that is proportional to VGS stress time. Repeating the measurements at elevated temperatures reduces the time dependency of the VTH shift, thereby indicating thermal acceleration of negative charge trapping. VTH recovery is also observed using SC measurements. Similar measurements are performed on Si IGBTs with no observable impact of VGS stress on SC measurements. In conclusion, a test methodology for investigating the impact of BTI on SC characteristics is presented along with key results showing the electrothermal dynamics of parallel devices under SC conditions.

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Current Saturation Characteristics and Single-Pulse Short-Circuit Tests of Commercial SiC MOSFETs

Cited by 15 publications

References 7 publications

Non-isothermal simulation of SiC DMOSFET short circuit capability

Non-isothermal simulation of SiC DMOSFET short circuit capability

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

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