2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) 2016
DOI: 10.1109/epe.2016.7695453
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Current sharing inside a high power IGBT module at the negative temperature coefficient operating region

Abstract: This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal stressing of the device is evaluated. The results indicate that the current asymmetry does not lead to a significant thermal stressing unbalance between the substrates.

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Cited by 2 publications
(2 citation statements)
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“…The test can also be used in scheduled service stops to detect the aforementioned main aging modes of the IGBTs. The method focuses on the IGBTs, because they are the devices that are stressed the most in the application at CERN [17]. For applications with predefined load profiles and, as a result, predictable thermal stressing profiles, it is not needed to monitor the temperature online; the aging process typically affects the junction temperature profile during specific loading cycle and hence it can be detected by comparison of the V ce measurements during the lifetime.…”
Section: A Aim Of the Methodsmentioning
confidence: 99%
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“…The test can also be used in scheduled service stops to detect the aforementioned main aging modes of the IGBTs. The method focuses on the IGBTs, because they are the devices that are stressed the most in the application at CERN [17]. For applications with predefined load profiles and, as a result, predictable thermal stressing profiles, it is not needed to monitor the temperature online; the aging process typically affects the junction temperature profile during specific loading cycle and hence it can be detected by comparison of the V ce measurements during the lifetime.…”
Section: A Aim Of the Methodsmentioning
confidence: 99%
“…An industrially produced power stack is used for the experiments. The H-bridge comprises four single-switch IGBT modules mounted on a copper cooling plate [17]. voltage is controlled using an autotransformer.…”
Section: Methodsmentioning
confidence: 99%