Current state of the art in semiconductor detectors

Bertolini, Guido; Cappellani, F.; Restelli, G.

doi:10.1016/0029-554x(73)90799-4

Cited by 9 publications

(5 citation statements)

References 45 publications

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“…To obtain this, the readout electronics must be low noise. Historically, the front-end transistor was a JFET cooled to the temperature of the detector (77 K, liquid nitrogen temperature) [9,23]. This reduced the energy resolution to less than 1 keV for 1 MeV photons.…”

Section: Technology Material Geometry and Performance Of Hpge Gammmentioning

confidence: 99%

“…This has become possible when defect and impurity control in the process of crystal growth has reached a sufficient level of reliability. In addition to point defects and impurities, dislocations play a major role as they behave like a sink for impurities [1,9,12]. They can currently be revealed by chemical crystal etching.…”

Section: Starting Materialsmentioning

confidence: 99%

“…The goal was to eliminate the need for cryogenic operation by the use of large band gap semi-insulating material (diamond is also considered). Many difficulties still exist, mostly related to the defect density that is much higher in binary materials [9]. The other drawback is the possibility to grow large crystals, which proves to be more difficult for alternative materials.…”

Section: Alternatives To Hpgementioning

confidence: 99%

“…See Table 1 and Refs. [4][5][6][7][8][9][10] for studies, both theoretical and experimental, on ionization in semiconductors. In the early days of germanium γ-ray detection, less purified material was used.…”

Section: Introductionmentioning

confidence: 99%

“…There are presently a few corporations in Europe which supply such materials, without mentioning those from Eastern Europe. High-purity single crystals are usually grown in hydrogen atmosphere in a silica crucible [9,12]. This prevents the introduction of oxygen and other electrically active impurities.…”

Section: Introductionmentioning

confidence: 99%

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High Purity Germanium: From Gamma-Ray Detection to Dark Matter Subterranean Detectors

Fourches¹,

Zielińska²,

Charles³

2019

Use of Gamma Radiation Techniques in Peaceful Applications

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High purity germanium remains the material of choice for the detection of photons in the range of MeV or higher, down to the hard X-ray range. Since the operation of HPGe-based detectors is possible only at or below the liquid nitrogen temperature, their advantage is mainly the resolution, which matches the Fano factor if appropriate cooled electronic readout is used. We focus here on present-day applications of HPGe detectors, which are now broader than ever despite the recent development of room-temperature photon detectors based on binary compounds. We present in particular dark matter detectors and γ-ray trackers as examples of the recent applications of HPGe as a detecting medium. More generally, we discuss the future of γ-ray detectors and the role that the semiconductor detectors will keep with respect to alternative detection materials. This chapter is an introduction to this general topic, and the reader is encouraged to refer to research and review articles on this subject published in the past or recently.

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Section: Technology Material Geometry and Performance Of Hpge Gammmentioning

confidence: 99%

Section: Starting Materialsmentioning

confidence: 99%

Section: Alternatives To Hpgementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

High Purity Germanium: From Gamma-Ray Detection to Dark Matter Subterranean Detectors

Fourches¹,

Zielińska²,

Charles³

2019

Use of Gamma Radiation Techniques in Peaceful Applications

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Thermoelastische und elastische Eigenschaften des tetragonalen Quecksilberdijodids

Haussühl

Scholz

1975

Cryst Res and Technol

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Thernioelastische und elastische Eigenschaften des tetragonalen QuecksilberdijodidsAlle elastische Konstanten cij und thermoelastische Konstanten T,, = d log c,,/dT (T Temperatur) des tetragonalen HgJ, wurden mit Hilfe von Ultraschallmethoden an Einkristallen gemessen, die aus der Dampfphase mit der Methode der dynamischen Gradientenumkehr gezuchtet worden waren. HgJ, weist starke elastische AnisotropieEffekte auf, die sich qualitativ aus der Struktur deuten lassen. Die Temperaturabhiingigkeit der elastischen Konstanten ist geringer als erwartet. Lediglich die sehr kleine Scherkonstante cg6 sinkt betriichtlich mit wachsender Temperatur. Dieses Verhalten durfte rnit der bekannten Phasenumwandlung bei 126 "C zusammenhiingen. elastic constants ci, and thermoelastic constants T,, = d log c,,/d T ( T temperature)of tetragonal HgI, have been measured by ultrasonic methods on single crystals which had been grown from the vapour phase by the method of dynamical gradient reversal. HgI, exhibits strong anisotropic elastic properties which are qualitatively explained by structural details. The temperature dependence of the elastic constants is smaller than expected. Only the very small shear constant c16 is strongly decreasing with increasing temperature. This behaviour might be seen in connection with the known phase transition at about 126 "C.

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A Review of Gamma Camera Technology for Medical Imaging

McKeighen¹

1980

Nuclear Medicine, Ultrasonics,and Thermography

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Current state of the art in semiconductor detectors

Cited by 9 publications

References 45 publications

High Purity Germanium: From Gamma-Ray Detection to Dark Matter Subterranean Detectors

High Purity Germanium: From Gamma-Ray Detection to Dark Matter Subterranean Detectors

Thermoelastische und elastische Eigenschaften des tetragonalen Quecksilberdijodids

A Review of Gamma Camera Technology for Medical Imaging

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