Current status of GaN power devices

Kachi, Tetsu

doi:10.1587/elex.10.20132005

Cited by 32 publications

(26 citation statements)

References 30 publications

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“…From the high-field linear part of the plot, barrier height of 0.92 eV was extracted using effective electron tunneling mass of m* ¼ 0.28m 0 , 17 assuming electron tunneling from GaN into Al 2 O 3 conduction band through a triangular barrier. However, the resulting barrier height is more than two-times lower than the reported conduction band discontinuity between GaN and ALD grown Al 2 …”

Section: B I-v and C-v Measurementsmentioning

confidence: 60%

“…[1][2][3] For switching devices, enhancementmode transistors with threshold voltage (V th ) as high as $5 V are often required from the system level. 4 Owing to inherent depletion-mode character of the GaN HEMTs, a great effort has been devoted toward the development of enhancementmode (or normally-off) devices for switching applications.…”

Section: Introductionmentioning

confidence: 99%

“…4 Owing to inherent depletion-mode character of the GaN HEMTs, a great effort has been devoted toward the development of enhancementmode (or normally-off) devices for switching applications. [1][2][3][4][5][6] Although several concepts for normally-off GaN HEMTs have been proposed in the literature, 2,5,6 fabrication of such devices with sufficiently high V th ($5 V) and uncompromised current driving capability (compared to normally-on counterparts) remains a challenge. Application of a metal-oxidesemiconductor (MOS) gate structure in GaN HEMTs (MOS-HEMTs) offers a promising approach to overcome the existing trade-off between V th and output current of the device, providing sufficiently high negative polarization charge (>1.8 Â 10 13 cm…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Ťapajna

Valik

Gucmann

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The oxide/semiconductor interface state density (Dit) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with gate oxides grown by atomic layer deposition at low deposition temperature is analyzed in this work. MOS-HEMT structures with Al2O3 gate oxide were deposited at 100 and 300 °C using trimethylaluminum precursor and H2O and O3 oxidation agents. The structures were found to show negative net charge at oxide/barrier interface with density (Nint) of 1013 cm−2, which was attributed to the reduction of barrier surface donor density (NDS). Dit was determined using capacitance transient techniques, and the results were assessed by the simulations of the capacitance–voltage characteristics affected by interface traps. The results indicate a lower interface quality of the sample with Al2O3 grown using O3 agent compared to those with H2O, even though the former provided lowest gate leakage among the analyzed structures. Moreover, to uncover the NDS nature, Dit distributions determined here were compared to that reported previously on devices with Nint close to zero, i.e., with fully compensated surface barrier polarization charge by NDS [Ťapajna et al., J. Appl. Phys. 116, 104501 (2014)]. No clear correlation between Dit and NDS was concluded, indicating the nature of NDS to be different from that of interface states in the energy range analyzed here.

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Section: B I-v and C-v Measurementsmentioning

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Ťapajna

Valik

Gucmann

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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show abstract

“…22 ZnO, a material of less maturity than that of its III-V nitride counterparts, has also experienced dramatic improvements in its material quality since its pioneering days [84]. 23 As a result of these improvements in material quality, GaN, AlN, InN, and ZnObased electron devices have become available [98,101,129]. More wide energy gap semiconductor based device applications are currently under development, and these will undoubtedly become available in the near-term future.…”

Section: Electron Transport Conclusionmentioning

confidence: 99%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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“…Resulting polarization charges formed at the heterojunction interface of these materials induce 2DEG with a sheet electron concentration in the order of 10 13 cm −2 (one order of the magnitude larger than the 2DEG concentration in GaAs-and InP-based materials) [3]. In addition, GaN-based materials are robust enough to consider as power devices [4]. On the other hand, they are also considered as a promising candidate of the high-frequency devices because the saturation electron velocity is equivalent to that of GaAs [5].…”

Section: Introductionmentioning

confidence: 99%

InP and GaN high electron mobility transistors for millimeter-wave applications

Suemitsu

2015

IEICE Electron. Express

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This paper reviews two important candidates of millimeter-and sub-millimeter-wave applications, InP-and GaN-based high electron mobility transistors (HEMTs). For both devices, the gate length scaling has already well developed to the dimension of 15-30 nm. For further improvement in the cutoff frequency, an importance of the careful managements of parasitic components in the devices is discussed. Successful reduction of the parasitic gate delay time will enable us to achieve a cutoff frequency of over 1 THz in InP-based HEMTs and that of over 500 GHz in GaN-based HEMTs.

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Current status of GaN power devices

Cited by 32 publications

References 30 publications

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

InP and GaN high electron mobility transistors for millimeter-wave applications

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