Current transport and deep levels in p-Si/n-Zn0.9Mg0.1O/n-ZnO heterojunction

Paradowska, K.M.; Płaczek‐Popko, E.; Pietrzyk, M.A.; Gwóźdź, Katarzyna; Kozanecki, A.

doi:10.1016/j.jallcom.2016.09.014

Cited by 6 publications

(5 citation statements)

References 43 publications

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“…Two activation energy levels of 0.10 eV (σ = 3 ×10 −15 ) and 0.11 eV (σ = 2 ×10 −17 ) were found in hydrothermally grown ZnO samples similar to our studies [51]. Paradowska et al also found a defect with an energy of 0.06 ± 0.01 eV in a ZnO base heterojunction, and they claimed that this trap is in the shallow defect level [47]. A shallow donor level of 0.06-0.07 eV was observed in bulk ZnO, which was grown by using a vapor-phase technique [52].…”

Section: Dlts Analysissupporting

confidence: 89%

“…By contrasting and comparing our DLTS results with the reported defect levels [43,47,55,62,65,67,74], the authors conclude that the origins of all the synthesized ZnO nanostructure's P 1 , P 2 , P 3 , P 4 , and P 5 defects are Zinc antisites (Zn o ), Zinc vacancies (V zn ), Zinc interstitials (Zn i ), Oxygen vacancies (V o ), and Oxygen interstitials (O i ), respectively. However, we did not identify any defect energy levels related to Oxygen antisites (O zn ).…”

Section: Dlts Analysismentioning

confidence: 75%

“…The P 1 trap around 0.13 eV is only observed in the ZnO nanoshuttles morphology. According to the literature [47], this 0.13 eV defect energy level trap may occur due to semishallow donor defects related to Zinc antisites (Zn o ). From previous studies [43,62], the P 2 trap with a defect energy level around 0.27 eV to 0.31 eV may be attributed to Zinc vacancies (V zn ).…”

Section: Dlts Analysismentioning

confidence: 98%

“…The trap sites created by the defects significantly influence the electrical and optical properties of a semiconductor device [46]. From the scientific literature, we commonly found an electron trap with ∼0.10 eV corresponding to the ZnO crystals [41,[47][48][49]. However, this defect level is still not fully accepted as the signature defect in ZnO.…”

Section: Dlts Analysismentioning

confidence: 99%

“…Another common trap state with ∼0.40 eV was reported on ZnO-related samples due to Oxygen interstitials (O i ) [47]. This defect energy level occurs due to the interface of a semiconductor and an oxide [70].…”

Section: Dlts Analysismentioning

confidence: 99%

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Deep-Level Transient Spectroscopy Studies on Four Different Zinc Oxide Morphologies

Rathnasekara,

Mayberry,

Hari

2024

Crystals

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In this work, we described the variations in the defect energy levels of four different ZnO morphologies, namely nanoribbons, nanorods, nanoparticles, and nanoshuttles. All the ZnO morphologies were grown on a seeded 4% Boron-doped p-type silicon (p-Si) wafer by using two different synthesis techniques, which are chemical bath deposition and microwave-assisted methods. The defect energy levels were analyzed by using the Deep-Level Transient Spectroscopy (DLTS) characterization method. The DLTS measurements were performed in the 123 K to 423 K temperature range. From the DLTS spectra, we found the presence of different trap-related defects in the synthesized ZnO nanostructures. We labeled all the traps related to the four different ZnO nanostructures as P1, P2, P3, P4, and P5. We discussed the presence of defects by measuring the activation energy (Ea) and capture cross-section (α). The lowest number of defect energy levels was exhibited by the ZnO nanorods at 0.27 eV, 0.18 eV, and 0.75 eV. Both the ZnO nanoribbons and nanoparticles show four traps, which have energies of 0.31 eV, 0.23 eV, 0.87 eV, and 0.44 eV and 0.27 eV, 0.22 eV, 0.88 eV, and 0.51 eV, respectively. From the DLTS spectrum of the nanoshuttles, we observe five traps with different activation energies of 0.13 eV, 0.28 eV, 0.25 eV, 0.94 eV, and 0.50 eV. The DLTS analysis revealed that the origin of the nanostructure defect energy levels can be attributed to Zinc vacancies (Vzn), Oxygen vacancies (Vo), Zinc interstitials (Zni), Oxygen interstitials (Oi), and Zinc antisites (Zno). Based on our analysis, the ZnO nanorods showed the lowest number of defect energy levels compared to the other ZnO morphologies.

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Section: Dlts Analysissupporting

confidence: 89%

Section: Dlts Analysismentioning

confidence: 75%

Section: Dlts Analysismentioning

confidence: 98%

Section: Dlts Analysismentioning

confidence: 99%

Section: Dlts Analysismentioning

confidence: 99%

See 3 more Smart Citations

Deep-Level Transient Spectroscopy Studies on Four Different Zinc Oxide Morphologies

Rathnasekara,

Mayberry,

Hari

2024

Crystals

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Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures

Öztel,

Akçay,

Algün

2024

J Mater Sci: Mater Electron

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This study reports the investigation of the effect of cerium (Ce) dopant concentration on defect levels in Ce-doped ZnO/p-type Si (p-Si) heterojunctions (HJs) by deep-level transient spectroscopy (DLTS). Undoped ZnO (uZnO) and Ce-doped ZnO (Ce:ZnO) were synthesized at different molar ratios using the sol–gel method, and n-Ce:ZnO/p-Si heterojunctions were fabricated on p-Si via spin coating. According to energy dispersive x-ray spectroscopy (EDS) data, no foreign atoms are present in the synthesized nanoparticles. A critical observation is that the oxygen content increases with Ce doping. Scanning electron microscopy (SEM) images revealed uniform spherical grains, with a decrease in grain size as Ce dopant concentration increased. X-ray diffraction (XRD) confirmed a hexagonal wurtzite crystal structure for all nanostructures. I–V measurements documented that the structures have a good rectifying behavior and that the structure exhibiting the best diode character is the Ce:ZnO/p-Si heterostructure containing 2 mol% Ce with an ideality factor of 3.36. DLTS revealed that Ce doping deepened defect levels below the conduction band edge (Ec), with trap level positions calculated as Ec − 0.079, Ec − 0.311, Ec − 0.290, and Ec − 0.386 eV for undoped, 1, 2, and 5 mol% Ce-doped ZnO/p-Si, respectively. The trap concentration decreases with the addition of Ce into the ZnO lattice. The study underlines the tunability of the electrical properties of ZnO/p-Si HJs through Ce doping and the optimizability of their efficiency.

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The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction

Wang

et al. 2017

Journal of Electron Spectroscopy and Related Phenomena

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Current transport and deep levels in p-Si/n-Zn0.9Mg0.1O/n-ZnO heterojunction

Cited by 6 publications

References 43 publications

Deep-Level Transient Spectroscopy Studies on Four Different Zinc Oxide Morphologies

Deep-Level Transient Spectroscopy Studies on Four Different Zinc Oxide Morphologies

Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures

The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction

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