Current transport mechanism in InGaP∕GaAsSb∕GaAs double-heterojunction bipolar transistors

Abstract

Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors Appl. Phys. Lett. 98, 242103 (2011); 10.1063/1.3599582Kirk effect mechanism in type-II In P ∕ Ga As Sb double heterojunction bipolar transistors

Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors

“…It can be seen that the two terminal currents do not overlay each other. It has a ∼20 mV reduction of V B under reverse active mode suggesting a possible involvement of conduction barrier limited carrier transport at E–B junction 13, 14.…”

High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors

“…There are two current-transport mechanisms at heterojunction interface: diffusion limitation mechanism and the conduction band barrier limitation mechanism [15]. The dominant carrier injection mechanism at E-B (emitterbase) junction of the HBTs could be identified by comparing collector currents (in forward active mode) and emitter currents (in reverse active mode) of the devices.…”

“…where n BE and n BC are the ideality factors of the E-B and B-C heterojunction, J ES and J CS are the magnitudes of the emitter and collector saturation currents at V BC = V BE = 0, a N is the forward current gain, R E and R B are emitter and base series resistances [15]. The higher V offset of sample A is due to an unsymmetrical nature of the InP/InAlAs/ GaAsSb/InP DHBT structure, which results in the distinct ideality factors and saturation currents in I C and I E .…”