Current transport mechanisms in n‐InSe/p‐CdTe heterojunctions

Gorley, P. M.; Grushka, Z. M.; Makhniy, V. P.; Grushka, O. G.; Chervinsky, O. A.; Horley, Paul; Vorobiev, Yu. V.; González‐Hernández, J.

doi:10.1002/pssc.200780149

Cited by 15 publications

(13 citation statements)

References 6 publications

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“…The slope of the latter plots corresponds to the height of a energetic barrier eφ b = (0.85±0.02) eV of the structure. It is worth mentioning that the obtained eφ b for n-SnS 2 /n-CdIn 2 Te 4 heterojunction is higher than that for n-InSe/p-СdTe (eφ b = 0.71 eV) and n-InSe/p-GaSe (eφ b = 0.73 eV) [13,14]. The latter suggests promising perspectives for applications of n-SnS 2 /n-CdIn 2 Te 4 heterojunction in IR-devices, intended for a stable operation under the elevated temperatures and high incident radiation.…”

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confidence: 80%

Electrical properties of n-SnS2/n-CdIn2Te4 heterostructure

Gorley¹

2010

Semicond. phys. quantum electron. optoelectron.

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Using the method of deposition over the optical contact, the authors created n-SnS 2 /n-CdIn 2 Te 4 heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of current transport through the semiconductor contact were determined, allowing prediction of successful possible applications of the heterojunction studied under high temperatures and elevated radiation due to the parameters of the base semiconductors and the diode structure itself.

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mentioning

confidence: 80%

Electrical properties of n-SnS2/n-CdIn2Te4 heterostructure

Gorley¹

2010

Semicond. phys. quantum electron. optoelectron.

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“…8). The relatively large ideality coefficient n 3.4 results from the dominating current transport mechanism through the forward-biased propolis/p-CdTe heterojunctions, which is determined by the recombination processes within the space charge region via deep energy levels in the presence of electrically active surface states at the propolis/CdTe interface [33,34]. The deviation from the linear I-V dependence at high forward bias (the inset from Fig.…”

Section: B Electrical Properties Of Propolis Filmsmentioning

confidence: 99%

“…The deviation from the linear dependence (the inset in Fig. 10) results from the carrier multiplication due to impact ionization at large reverse bias [33,34].…”

Section: B Electrical Properties Of Propolis Filmsmentioning

confidence: 99%

11th International Conference “Correlation Optics”: Propolis films for hybrid biomaterial-inorganic electronics and optoelectronics

et al. 2014

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We report on the analysis of optical, polarimetric, and electrical properties of propolis films and hybrid biomaterial-inorganic heterojunctions based on them. It was shown that the material of the propolis films belongs to wide-bandgap optically active substances with the light-scattering centers, which possess complex optical properties. The values of the specific resistance ρ(P)=1.9·10⁷ Ω·cm and dielectric constant ε(P)=19.5 of the propolis film were determined from the spectral distribution of the real and imaginary components of its impedance at room temperature, respectively. The dominating current transport mechanisms through the hybrid bioinorganic heterojunction propolis/p-CdTe were established to be the interface-states-assisted generation-recombination within the depletion region via deep energy levels at forward bias as well as the leakage current through the shunt resistance at reverse bias.

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“…The layered structure of A III B VI compounds, with weak polarisation bonds between packings, allows obtaining of single crystalline lamellae, with nano‐metric thickness, by cleavage of massive single crystals . These lamellae can be used as base elements in heterojunctions with optical contact, structures of semiconductor‐own oxide type and metal‐semiconductor contact . Both, the specifics of chemical bonds between the atoms of B‐A‐A‐B layered packings, and low density of surface states (≈10 10 cm −2 ), define the obtaining methods of 2D structures for nano‐lamellar electronic devices, ultrathin layer transistors, etc.…”

Section: Introductionmentioning

confidence: 99%

Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours

Untilă

Evtodiev

Caraman

et al. 2018

Physica Status Solidi (a)

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The structural, optical and photoelectric properties of InSe crystals grown by Bridgman-Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe-InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS-NIR spectral region.

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Current transport mechanisms in n‐InSe/p‐CdTe heterojunctions

Abstract: A highly diastereoselective hetero‐Diels–Alder reaction, an O–C rearrangement, and a spatial/chemical desymmetrization are three new reactions that have been developed and exploited in the total synthesis of muricatetrocin C, an annonaceous acetogenin.

Cited by 15 publications

References 6 publications

Electrical properties of n-SnS2/n-CdIn2Te4 heterostructure

Electrical properties of n-SnS2/n-CdIn2Te4 heterostructure

11th International Conference “Correlation Optics”: Propolis films for hybrid biomaterial-inorganic electronics and optoelectronics

Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours

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