Current-transport mechanisms in the Au/GaSe:Nd Schottky contact

Ertap, Hüseyin; Kaçuş, Hati̇ce; Aydoğan, Ş.; Karabulut, Mevlüt

doi:10.1007/s10854-020-03079-2

Cited by 3 publications

(1 citation statement)

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“…Probably, the changes in the values of the ideality factor indicate that the different recombination current losses affect performance of the device, such as interfacial recombination, bulk recombination, etc. Similar trends have already been reported by other authors 11 , 12 and have been explained by assuming inhomogeneities at the interface. In addition, the values of barrier height and ideality factor measured at the n CdS/ p ZnTe HJ in the high-temperature region from 290 to 350 K exhibited a deviation from the thermionic emission model.…”

Section: Resultssupporting

confidence: 91%

DC current–voltage and impedance spectroscopy characterization of nCdS/pZnTe HJ

Lungu,

Patru,

Galca

et al. 2024

Sci Rep

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This paper describes the electrical and dielectric behavior of the nCdS/pZnTe HJ by current–voltage, capacitance–voltage characteristics, and impedance spectroscopy in a temperature interval 220–350 K. A microcrystalline p-ZnTe layer and n-CdS were grown on glass/ZnO substrate by closed space sublimation method. As frontal contact to CdS, the transparent ZnO and as a back contact to ZnTe, silver conductive paste (Ag) treated at 50 °C in vacuum were used. The current–voltage results of nCdS/pZnTe HJ show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The built-in voltage, carrier concentration and depletion width were obtained from the capacitance–voltage measurements. Analysis of the J–V–T and C–V–T characteristics shows that the thermionic emission and recombination current flow mechanisms dominate in the nCdS/pZnTe HJ. The dielectric study reveals that the experimental values of the AC conductivity, dielectric constant, dielectric loss, the imaginary part of the electric modulus are found to be very sensitive to frequency and temperature. The dielectric constant and dielectric loss are observed to be high at the low frequency region. The increase in the values of electric modulus with the frequency implies an increase in the interfacial polarization at the interface of nCdS/pZnTe HJ. Jonscher’s universal power law shows that with increasing frequency, AC conductivity increased. The results conductivity show that the ionic conductivity and interfacial polarization are the main parameters affecting the dielectric properties of the device when the temperature changes.

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Section: Resultssupporting

confidence: 91%