Current transport studies of ZnO∕p-Si heterostructures grown by plasma immersion ion implantation and deposition

Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Mei, Yongfeng; Fu, Ricky K.Y.; Siu, G. G.; Chu, Paul K.

doi:10.1063/1.2190444

Cited by 74 publications

(36 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9(a) for ZnCdO/p + -SiC and in Fig. 9(b) for ZnCdO/p-SiC, the slope is R S [31]. Diode series resistances in the range of 166 Ω to 3.865 kΩ depend on acceptor concentration.…”

Section: Fig 8 Diode Resistance Dv/di As a Function Of Voltage For mentioning

confidence: 99%

“…Nevertheless, the heterojunction diode fabricated from ZnCdO grown on p + -SiC exhibited more stable rectification characteristics and higher value of I F /I R . The diode series resistance determined as Rs = dV/dI [31] is depicted in Figure 8. Below the turn-on voltage, Rs lowers with increasing the forward bias.…”

Section: Fig 6 Map Of the Lateral Cadmium Distribution For The Film mentioning

confidence: 99%

See 1 more Smart Citation

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Shtepliuk

Khranovskyy

Lashkarev

et al. 2013

Solid-State Electronics

View full text Add to dashboard Cite

We report the low-temperature (250°C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current-voltage measurements showed a typical rectifying characteristic of a p-n junction and the presence of series resistance. It is found that the turn-on voltage of heterostructures depends on the acceptor concentration in p-SiC. Via Cd doping of ZnO the energy barrier for holes can be lowered, which promotes the hole injection from the p-type layer to the n-type layer as well as favors the radiative recombination in the n-ZnCdO layer.

show abstract

“…9(a) for ZnCdO/p + -SiC and in Fig. 9(b) for ZnCdO/p-SiC, the slope is R S [31]. Diode series resistances in the range of 166 Ω to 3.865 kΩ depend on acceptor concentration.…”

Section: Fig 8 Diode Resistance Dv/di As a Function Of Voltage For mentioning

confidence: 99%

Section: Fig 6 Map Of the Lateral Cadmium Distribution For The Film mentioning

confidence: 99%

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Shtepliuk

Khranovskyy

Lashkarev

et al. 2013

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

“…3 (inset) and it illustrates the current transport mechanism exhibit in a three different regions. The current in region [17,18] and in Schottky contact to ZnO nanorods [19].…”

Section: Resultsmentioning

confidence: 99%

Study of luminescent centers in ZnO nanorods catalytically grown on 4H-p-SiC

Bano¹,

Hussain²,

Nur³

et al. 2009

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Abstract:High quality ZnO nanorods (NRs) were grown by the vapour-liquid-solid (VLS) technique on 4H-p-SiC substrates. Heterojunction light emitting diodes (LEDs) were fabricated. Electrical characterisation including deep level transient spectroscopy (DLTS) complemented by photolumincence (PL) are used to characterize the heterojunction LEDs. On contrary to previously published results on n-ZnO thin films on p-SiC, we found that the dominant emission is originating from the ZnO NRs. Three luminescence lines have been observed, these are associated with blue (465 nm) and violet (446 nm) emission lines from ZnO NRs emitted by direct transition/recombination of carriers from the conduction band to a zinc vacancy (V Zn ) radiative centre and from zinc interstitial (Zn i ) radiative center to the valance band. The third green-yellow (575 nm) spectral line is emitted due to a transition of carriers from Zn i to V Zn . The superposition of these lines led to the observation of strong white light which appears as a wide band in the room temperature PL.

show abstract

“…Among these ZnO-based heterojunctions, ZnO/Si heterostructure is considered as the key research due to ZnO-based LEDs could be compatible with the silicon micro-electronic technology effectively. From the Anderson model of n-ZnO/p-Si heterojunction, however, the combination between the electrons and holes always occurs at the p-Si side due to the smaller conduction band offset (0.3 eV) comparing to the larger valence band offset (2.55 eV) [6,10,11]. Therefore, the interband radiative recombination in ZnO is very low and hardly ever effective UV emissions are actualized [12,13].…”

Section: Introductionmentioning

confidence: 94%