Current versus gate voltage hysteresis in organic field effect transistors

Egginger, Martin; Bauer, Siegfried; Schwödiauer, Reinhard; Neugebauer, Helmut; Sariciftci, Niyazi Serdar

doi:10.1007/s00706-009-0149-z

Cited by 291 publications

(256 citation statements)

References 166 publications

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“…[56][57][58] The orientation of the hysteresis is significant and suggests a charge injection effect. 59,60 By comparing the extracted forward (v f D ) and reverse (v r D ) sweep Dirac points a similar trend appears in both materials. Generally, v f D is constant, while v r D increases suggesting that charge injection occurs only when ϵ f > 0.…”

Section: Discussionsupporting

confidence: 55%

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

et al. 2016

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Capacitance voltage (CV) measurements are performed on planar MOS capacitors with an Al2O3 dielectric fabricated in hydrogen intercalated monolayer and bilayer graphene grown on 6H-SiC as a function of frequency and temperature. Quantitative models of the CV data are presented in conjunction with the measurements in order to facilitate a physical understanding of graphene MOS systems. An interface state density of order 2 . 10(12)eV(-1)cm(-2) is found in both material systems. Surface potential fluctuations of order 80-90meV are also assessed in the context of measured data. In bilayer material, a narrow bandgap of 260meV is observed consequent to the spontaneous polarization in the substrate. Supporting measurements of material anisotropy and temperature dependent hysteresis are also presented in the context of the CV data and provide valuable insight into measured and modeled data. The methods outlined in this work should be applicable to most graphene MOS systems. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Funding Agencies|European Science Foundation (ESF) under EUROCORES Program EuroGRAPHENE; EU [604391]; Swedish Foundation for Strategic Research (SSF); Knut and Alice Wallenberg Foundation (KAW)

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Section: Discussionsupporting

confidence: 55%

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

et al. 2016

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Funding Agencies|European Science Foundation (ESF) under EUROCORES Program EuroGRAPHENE; EU [604391]; Swedish Foundation for Strategic Research (SSF); Knut and Alice Wallenberg Foundation (KAW)

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“…The electronic performances of the bare P3HT-OFET degrade upon the direct exposure to the lithium perchlorate aqueous solution. This system shows a progressive current increase as the sweeping rate decreases, as well as a larger hysteresis area, which can be attributed to the penetration of perchlorate anions into the OS combined with other mechanisms [27]. Further investigation would be needed to determine the contribution of each phenomenon to the overall OFET hysteresis, which is outside the scope of this paper.…”

Section: Resultsmentioning

confidence: 96%

Phospholipid film in electrolyte-gated organic field-effect transistors

Cotrone

Ambrico

Toss

et al. 2012

Organic Electronics

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A totally innovative electrolyte-gated field effect transistor, embedding a phospholipid film at the interface between the organic semiconductor and the gating solution, is described. The electronic properties of OFETs including a phospholipid film are studied in both pure water and in an electrolyte solution and compared to those of an OFET with the organic semiconductor directly in contact with the gating solution. In addition, to investigate the role of the lipid layers in the charge polarization process and quantify the field-effect mobility, impedance spectroscopy was employed. The results indicate that the integration of the biological film minimizes the penetration of ions into the organic semiconductor thus leading to a capacitive operational mode as opposed to an electrochemical one. The OFETs operate at low voltages with a field-effect mobility in the 10 -3 cm 2 V -1 s -1 range and an on/off current ratio of 10 3 . This achievement opens perspectives to the development of FET biosensors potentially capable to operate in direct contact with physiological fluids.2

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“…16,17 In contrast, the TOMDs already possess their own transistors for active driving, so they are considered one of the simplest and most cost-effective memory devices for flexible plastic memory modules in the coming flexible electronics era. 18,19 It has been reported that TOMDs have memory functions from ferroelectric polymers, metal nanoparticles or charge trapping layers, and polymer energy well structures. [20][21][22][23][24][25][26][27][28][29][30] However, most TOMDs reported to date have limitations with respect to high operation voltages and/or poor retention (stability) characteristics, even though basic memory functions in transistor structures can be welldemonstrated.…”

Section: Introductionmentioning

confidence: 99%

Strong molecular weight effects of gate-insulating memory polymers in low-voltage organic nonvolatile memory transistors with outstanding retention characteristics

et al. 2016

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Organic nonvolatile memory transistors, featuring low-voltage operation (⩽5 V) and high retention characteristics (410 000 cycles), are demonstrated by introducing high molecular weight poly(vinyl alcohol) (PVA) as a gate insulating layer. PVA polymers with four different molecular weights (9.5-166 kDa) are examined for organic memory devices with poly(3-hexylthiophene) channel layers. All devices show excellent p-type transistor behavior and strong hysteresis in the transfer curves, but the lower molecular weight PVA delivers the higher hole mobility and the wider memory window. This has been attributed to the higher ratio of hydroxyl group dipoles that align in the out-of-plane direction of the PVA layers, as supported by impedance spectroscopy (dielectric constants), polarized Fourier transform-infrared spectroscopy and synchrotron radiation grazing incidence X-ray diffraction measurements. However, outstanding retention characteristics (o4% current variation after 10 000 cycles) have been achieved with the higher molecular weight PVA (166 kDa) rather than the lower molecular weight PVA (9.5 kDa).

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Current versus gate voltage hysteresis in organic field effect transistors

Cited by 291 publications

References 166 publications

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

Phospholipid film in electrolyte-gated organic field-effect transistors

Strong molecular weight effects of gate-insulating memory polymers in low-voltage organic nonvolatile memory transistors with outstanding retention characteristics

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