Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode

Rabehi, Abdelaziz; Akkal, B.; Amrani, M.; Tizi, S.; Benamara, Z.; Helal, Hicham; Douara, Abdelmalek; Nail, Bachir; Ziane, Abderrezzaq

doi:10.1134/s1063782621040138

Cited by 3 publications

(2 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where q is the electron charge, k is the Boltzmann constant, T is the absolute temperature, A is the effective diode area, A * is the effective Richardson constant (for 6H-SiC it is 156 Acm -2 k -2 [7]), RS is the series resistance, bn is the barrier height, n is the ideality factor.…”

Section: Electrical Measurements and Modelingmentioning

confidence: 99%

See 1 more Smart Citation

Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function

Rabehi¹,

Rabehi²,

Douara³

et al. 2022

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

Electrical study of Ni and Ti metals of Schottky contacts on n-6H-SiC epitaxial layers is performed, by current-voltage (I-V) characterization. Ni/6H-SiC shows inhomogeneous barrier height behavior. Thermionic emission model is coupled with the Lambert function to obtain an explicit form of the Schottky equation as well as to specify the number of branches necessary for modeling the abnormal behavior. The inhomogeneous barrier height for the investigated Ni/6H-SiC junction can be reproduced by a model that includes two Schottky branches, which give a low (L) and a high (H) Schottky barriers ( L bn   0.92 eV, H bn   1.56 eV), as well as give a low and a high ideality factors (n L  1.93, n H  1.23).

show abstract

Section: Electrical Measurements and Modelingmentioning

confidence: 99%

“…Many researchers have already studied these effects [6]. The inhomogeneity is probably due to the quality of materials and interfaces with various defects such as carrots, growth pits and micropipes [7].…”

Section: Introductionmentioning

confidence: 99%

Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function

Rabehi¹,

Rabehi²,

Douara³

et al. 2022

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

show abstract

Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode

Bekaddour

Rabehi

Tizi

et al. 2023

Micro and Nanostructures

View full text Add to dashboard Cite

A comparative study of Schottky barrier heights and charge transport mechanisms in 3C, 4H, and 6H silicon carbide polytypes

Mekaret,

Rabehi,

Zebentout

et al. 2024

AIP Advances

View full text Add to dashboard Cite

This study undertakes a comparative analysis of Schottky diodes using three prominent SiC polytypes (3C, 4H, and 6H). The comparison involves meticulous calculations of the Schottky barrier resulting from the metal/SiC interface for each polytype assessed in both practical and theoretical scenarios. Specifically, the barrier height (ΦB) is systematically plotted against the metal work function (ΦM) across a range of metal work functions from 3.65 to 5.65 eV. Furthermore, the investigation extends to the saturation currents of three distinct charge transport models for each SiC polytype: thermionic current (TE), thermionic field emission, and field emission. Initial analyses plot saturation currents as a function of concentration within a temperature range of 100–500 K. Subsequent examinations plot saturation currents as a function of temperature across a concentration gradient from 1014 to 1020 cm−3. The comparison between the activation energy and thermal energy at standard room temperature (T = 300 K) yielded results consistent with theoretical predictions, affirming the robustness and applicability of each model within its dominant range.

show abstract

Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode

Cited by 3 publications

References 34 publications

Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function

Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function

Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode

A comparative study of Schottky barrier heights and charge transport mechanisms in 3C, 4H, and 6H silicon carbide polytypes

Contact Info

Product

Resources

About