Current-voltage characteristics of CdS/CIGS thin film solar cells: An analytical approach

Haque, M. E.; Rahman, M. K. M.; Chowdhury, Iqbal Bahar

doi:10.1109/iconce.2014.6808695

Cited by 8 publications

(1 citation statement)

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“…The huge expansion experienced by CIGS-based PV technology in this last decade needs suitable tools to estimate and predict the power generation of CIGS-based PV systems. Recent studies on the current-voltage characteristics of CIGS addressed some issues on modeling, such as in [8] or in [9], where analytical models of the J-V characteristics of CIGS-based thin film solar cell was proposed, starting from the study of the junction parameters. On the other hand, few works, to the authors' knowledge, have taken into account the dependence of the current-voltage characteristic on irradiance and temperature conditions.…”

Section: Introductionmentioning

confidence: 99%

Equivalent Circuit Model for Cu(In,Ga)Se2 Solar Cells Operating at Different Temperatures and Irradiance

et al. 2018

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The modeling of photovoltaic cells is an essential step in the analysis of the performances and characterization of PV systems. This paper proposes an experimental study of the dependence of the five parameters of the one-diode model on atmospheric conditions, i.e., irradiance and temperature in the case of thin-film solar cells. The extraction of the five parameters was performed starting from two sets of experimental data obtained from Cu(In,Ga)Se2 solar cells fabricated by the low-temperature pulsed electron deposition technique. A reduced form approach of the one-diode model has been adopted, leading to an accurate identification of the cell. It was possible to elaborate suitable relations describing the behavior of the parameters as functions of the environmental conditions. This allowed accurately predicting the trends of the parameters from a pair of curves, instead of a whole set of measurements. The developed model describing the dependence on irradiance and temperature was validated by means of a large set of experimental measurements on several Cu(In,Ga)Se2 (CIGS) devices built with the same technological process.

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Section: Introductionmentioning

confidence: 99%