1983
DOI: 10.1007/bf00896648
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Current-voltage characteristics of diode structures based on gallium arsenide doped by manganese or iron

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Cited by 2 publications
(4 citation statements)
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“…For GaAs:Cr,Fe diodes at first and second CVC regions generation mechanism take place. Third region can be explained by Pul-Frenkel theory [2,3]. At fourth region avalanche microplasmous breakdown take place [5].…”
Section: Methodsmentioning
confidence: 99%
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“…For GaAs:Cr,Fe diodes at first and second CVC regions generation mechanism take place. Third region can be explained by Pul-Frenkel theory [2,3]. At fourth region avalanche microplasmous breakdown take place [5].…”
Section: Methodsmentioning
confidence: 99%
“…3. Typical reverse CVC of diodes from two π-ν-n-structures at the room temperature before (a) and after (b) switch: GaAs:Cr (1); GaAs: Cr,Fe (2) Analysis had shown that forward CVC of both types of diodes can be described by Stafeev theory [4]. At first and second CVC regions recombination mechanism take place, at third region current under high injection level take place.…”
Section: Methodsmentioning
confidence: 99%
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