Current–voltage characteristics of Schottky diode simulated using semiconductor device equations

Kaushal, Priyanka; Chand, Subhash; Osvald, J.

doi:10.1080/00207217.2012.720946

Cited by 36 publications

(12 citation statements)

References 23 publications

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“…This value is in very close agreement with the theoretical value of 8.16 A (cm K) −2 for n-type GaAs. Thus, it can be said that the I-V characteristics of the device obey the TE current model in the 120-300 K range [34][35][36][37][38][39][40][41].…”

Section: Resultsmentioning

confidence: 99%

Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range

et al. 2014

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We have fabricated Au/Ti/n-GaAs/In Schottky barrier diodes using the magnetron dc sputter technique. The capacitance-temperature (C-T) measurements with bias voltage as a parameter and the current-voltage (I-V) and capacitance-voltage (C-V) measurements have been made in the temperature range of 60-300 K. The temperature-dependent capacitance measurements have been made at 1.0 MHz. The capacitance versus temperature curve at each bias voltage has four regions with slopes different from each other. The capacitance decreases with a decrease in temperature at each bias voltage. Such a temperature-dependent behavior could be attributed to modulation of the space charge region caused by the emission of deep-level impurities or interface states. The carrier concentration calculated in the −1.0 to −2.0 V range of C −2-V plots was close to the value of 7.43 × 10 15 cm −3 given by the manufacturer around room temperature. The ideality factor value from the I-V characteristics has remained almost unchanged between 1.07 and 1.10 in the temperature range of 150-300 K, indicating that the current across the device obeys the thermionic emission current model quite well over the whole bias range at temperatures above 150 K. Therefore, the conventional Richardson plot in this temperature range has given a Richardson constant of 8.21 A (cm K) −2 , within experimental error, which is in very close agreement with the theoretical value of 8.16 A (cm K) −2 for n-type GaAs. Again, it has been seen that the ideality factor with the values of 1.10 at 150 K and 1.22 at 60 K does not show a considerable decrease. The experimental parameters show that the Au(90 nm)/Ti(10 nm)/n-GaAs contact is a good candidate for electronic device applications.

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Section: Resultsmentioning

confidence: 99%

Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range

et al. 2014

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“…The value of ideality factor and barrier height determined from the forward bias I-V characteristics for dark and 100 mW/cm 2 is given in Table 1. The obtained ideality factor value is higher than unity due to series resistance, inhomogeneities of barrier height and interface states [40][41][42][43][44][45]. In addition, the series resistance affects the linear region of forward bias I-V curves and in turn, the linear region deviates from linearity.…”

Section: Photocurrent-voltage (I-v) Characteristics Of the Diodementioning

confidence: 89%

Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound

Yakuphanoğlu

Koran

Özen

et al. 2017

Silicon

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The electrical and photoresponse properties of an Al/p-Si/organic layer/Al diode were investigated. The organic layer containing novel 2,2-bis[spiro(7,8-dioxy-4-methylcoumarin)]-4,4,6,6-bis[spiro(2',2"-dioxy-1',1"biphenylyl)]cyclotriphosphazene compound was coated by the drop casting method on p-Si having ohmic contact. The structural characterization of the novel cyclotriphosphazene compound was confirmed by using 1 H, 13 C and 31 P-NMR, elemental analysis and FTIR spectroscopic techniques. The diode exhibits a photoconducting and photodiode behavior under solar light illumination. The electrical parameters such as ideality factor, barrier height and series resistance of the diode were determined from I-V characteristics. It is seen that the photocurrent of the diode under illumination is higher than the dark current. Also, the frequency dependence of capacitance (C) and conductance (G) was explained on the basis of interface states. It is evaluated that the hybrid photodiode can be used as a photosensor in organic photodetector applications.

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“…Internal Electric Field Characterization. The current through the Schottky diode formed by MAPbX 3 (X = Cl, Br, or I) and LSMO, I diode , is analyzed in the frame of the thermionic emission diffusion equation (36)…”

Section: La 07 Sr 03 Mno 3 /Ch 3 Nh 3 Pbimentioning

confidence: 99%

Tuning ferromagnetism at room temperature by visible light

Náfrádi

Szirmai

Spina

et al. 2020

Proc. Natl. Acad. Sci. U.S.A.

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Most digital information today is encoded in the magnetization of ferromagnetic domains. The demand for ever-increasing storage space fuels continuous research for energy-efficient manipulation of magnetism at smaller and smaller length scales. Writing a bit is usually achieved by rotating the magnetization of domains of the magnetic medium, which relies on effective magnetic fields. An alternative approach is to change the magnetic state directly by acting on the interaction between magnetic moments. Correlated oxides are ideal materials for this because the effects of a small external control parameter are amplified by the electronic correlations. Here, we present a radical method for reversible, light-induced tuning of ferromagnetism at room temperature using a halide perovskite/oxide perovskite heterostructure. We demonstrate that photoinduced charge carriers from theCH3NH3PbI3photovoltaic perovskite efficiently dope the thinLa0.7Sr0.3MnO3film and decrease the magnetization of the ferromagnetic state, allowing rapid rewriting of the magnetic bit. This manipulation could be accomplished at room temperature; hence this opens avenues for magnetooptical memory devices.

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Current–voltage characteristics of Schottky diode simulated using semiconductor device equations

Cited by 36 publications

References 23 publications

Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range

Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range

Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound

Tuning ferromagnetism at room temperature by visible light

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