Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications

Wu, Jingbo; Wen, Zheng; Wu, Di; Zhai, Haifa; Li, Aidong

doi:10.1016/j.jallcom.2010.10.134

Cited by 17 publications

(7 citation statements)

References 35 publications

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“…Copyright 2014 AIP Publishing LLC. Ternary oxide SrZrO 3 (SZO) has been used as RS material, and the conductive filament was believed to be formed by oxygen vacancies [72]. Previously, our first-principles calculations [73] provided a solid proof for the important role of oxygen vacancy.…”

Section: Accepted Manuscriptmentioning

confidence: 77%

An overview of materials issues in resistive random access memory

Zhu

Zhou

Guo

et al. 2015

Journal of Materiomics

122

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Resistive random access memory (RRAM) is a very promising next generation non-volatile RAM, with quite significant advantages over the widely used silicon-based Flash memories. For RRAM, material with switchable resistance, working as the storage medium, is the most important part for the performance of the memory. In this review, as a start, some general hints for the materials selection are proposed. Then most recent studies on this emerging memory from the perspective of materials science are summarized: various materials with resistance switch (RS) behavior and the underlying mechanisms are introduced; as a complementary to the previous review articles, here the increasingly important role of computational materials science in the research of RRAM is presented and highlighted. By incorporating the framework of high-throughput calculation and multi-scale simulations, design process of new RRAM could be accelerated and more cost-effective.

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Section: Accepted Manuscriptmentioning

confidence: 77%

An overview of materials issues in resistive random access memory

Zhu

Zhou

Guo

et al. 2015

Journal of Materiomics

122

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“…It constitutes a substantial portion of the oxide precursor solutions: around 98% and 90% for lower and higher concentrations, respectively. The most common solvents in solution-based metal oxide RRAMs are 2-methoxyethanol (2-ME), [63,72,79,80,98,102,104,105,107,109,112,113,[115][116][117][118][119]121,127,129,130,133,134,137,139,142,144,[150][151][152][153]158,159,[168][169][170][171][172][173][174][175][176][177][178][179][180][181][182][183]…”

Section: Solvent and Stabilizermentioning

confidence: 99%

“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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“…Resistive random access memories (RRAMs), in which binary logical states are represented by a low resistance and a high resistance state [1], have attracted considerable attention, due to their distinctive features and advantages meeting the demands of next generation high-speed [2,3], low-power consumption [3], and high-density [4] memory devices. A variety of oxides, including binary metal oxides [5][6][7][8], perovskite dielectrics [9][10][11][12], and complex electron correlated oxides [13][14][15][16], have been demonstrated to show resistance switching behaviors, among which TiO 2 [17,18] is one of the most extensively studied, owing to its unique advantages such as wide band gap, high temperature stability, and high dielectric constant with flexibility to exhibit both unipolar and bipolar switching characteristics. However, several issues, including device stability, endurance, and the ON/OFF resistance ratio [17], still need to be improved.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Characteristics in TiO₂/LaAlO₃Heterostructures Sandwiched in Pt Electrodes

Cao

Zhu

et al. 2015

Advances in Materials Science and Engineering

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TiO2/LaAlO3(TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/OFF resistance ratio can be greatly improved by introducing the LAO layer. The observed resistive switching characteristics are discussed as a function of LAO thickness and explained by the preferential formation and rupture of conductive filaments, composed of oxygen vacancies, in the LAO layer.

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Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications

Cited by 17 publications

References 35 publications

An overview of materials issues in resistive random access memory

An overview of materials issues in resistive random access memory

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Resistive Switching Characteristics in TiO₂/LaAlO₃Heterostructures Sandwiched in Pt Electrodes

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Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications

Cited by 17 publications

References 35 publications

An overview of materials issues in resistive random access memory

An overview of materials issues in resistive random access memory

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Resistive Switching Characteristics in TiO2/LaAlO3Heterostructures Sandwiched in Pt Electrodes

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Resistive Switching Characteristics in TiO₂/LaAlO₃Heterostructures Sandwiched in Pt Electrodes