2020
DOI: 10.3390/membranes10110361
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Curvature-Dependent Electrostatic Field as a Principle for Modelling Membrane-Based MEMS Devices. A Review

Abstract: The evolution of engineering applications is increasingly shifting towards the embedded nature, resulting in low-cost solutions, micro/nano dimensional and actuators being exploited as fundamental components to connect the physical nature of information with the abstract one, which is represented in the logical form in a machine. In this context, the scientific community has gained interest in modeling membrane Micro-Electro-Mechanical-Systems (MEMS), leading to a wide diffusion on an industrial level owing to… Show more

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Cited by 10 publications
(13 citation statements)
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References 30 publications
(306 reference statements)
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“…Note that . This result has been proved in [ 23 ] and confirmed numerically in [ 30 ]. On the other hand, due to reasons of symmetry, the points of characterized by the greatest slope of the membrane profile can only be those located on .…”
Section: A New Condition Ensuring the Uniqueness Of The Solutionsupporting
confidence: 68%
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“…Note that . This result has been proved in [ 23 ] and confirmed numerically in [ 30 ]. On the other hand, due to reasons of symmetry, the points of characterized by the greatest slope of the membrane profile can only be those located on .…”
Section: A New Condition Ensuring the Uniqueness Of The Solutionsupporting
confidence: 68%
“…We can also observe that the greater the , the greater the curvature of the membrane. On this basis, we have that can be considered locally proportional to the mean curvature of the membrane [ 23 , 24 , 25 , 30 ].…”
Section: A Description Of the 2 D Electrostatic Circular-membrane Mems Devicementioning
confidence: 99%
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