2018
DOI: 10.1039/c7ra11600d
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Curvature-dependent flexible light emission from layered gallium selenide crystals

Abstract: bandgap relation was present for further application of the layered GaSe in bendable flexible lightemission devices.

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Cited by 22 publications
(27 citation statements)
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“…Moreover, in comparison with its GaSe counterpart, the PL quantum efficiency of Ga 2 Se 3 in Figure 2 a is approximately 25% lower than that of the GaSe at room temperature. 13 , 23…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, in comparison with its GaSe counterpart, the PL quantum efficiency of Ga 2 Se 3 in Figure 2 a is approximately 25% lower than that of the GaSe at room temperature. 13 , 23…”
Section: Resultsmentioning
confidence: 99%
“…Due to its structure, GaSe shows fascinating optoelectronic properties, including photoresponse in ultraviolet–visible (UV–vis) spectral range (from 1.8 to 5 eV), nonlinear optical behavior, and a distinctive spin physics (e.g., spin‐orbit coupling effects and generation/retention of spin polarization under nonresonant optical pumping). For the aforementioned properties, GaSe has been proposed for photodetectors with high responsivity (e.g., up to values > 1000 A W −1 at light intensity ≤ 0.1 mW cm −2 , in heterojunction with graphene), nonlinear frequency generation (e.g., second and third harmonic and ultrabroadband radiation generation), spin polarization control (e.g., spintronic logic devices), light‐emitting devices, optical microcavities, and saturable absorbers . Moreover, the number of layers and strain engineering strongly affect the GaSe optoelectronic properties, which can be on‐demand tailored to fulfill the requirements of the final applications .…”
Section: Introductionmentioning
confidence: 99%
“…Two-dimensional (2D) semiconductors exhibit immense functionalities and practicalities of large area 1,2 , ultra-thin 3,4 , smooth surface 5 , high carrier mobility [6][7][8] , flexible layers [9][10][11] , and thickness-tunable band-gap modulation 12,13 that have gradually received blooming attention in semiconductor technological studies and development in the post-silicon era. Among the 2D semiconductors, transition-metal dichalcogenides (TMDCs) MX 2 (M = W, Mo, Re and X = S, Se) [14][15][16][17][18] comprising a monolayer structure with X-M-X and layered III-VI compounds NX (N = Ga, In and X = S, Se, Te) [19][20][21][22][23] that are composed of fundamental units of X-N-N-X might be two of the important braches of 2D materials that require further research and development in electronics and optoelectronics devices applications.…”
Section: Introductionmentioning
confidence: 99%