Curved-wave-front corrections for photoelectron scattering

Barton, J. J.; Shirley, D. A.

doi:10.1103/physrevb.32.1892

Cited by 96 publications

(23 citation statements)

References 16 publications

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“…The X(k) curve is weighted by k, extrapolated with autoreg~essive prediction, multiplied by a Gaussian weight and Fourier transformed as described in Ref. [5].…”

Section: Methodsmentioning

confidence: 99%

Surface Structure Determination with ARPEFS

Barton

Robey

Bahr

et al. 1985

The Structure of Surfaces

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“…The X(k) curve is weighted by k, extrapolated with autoreg~essive prediction, multiplied by a Gaussian weight and Fourier transformed as described in Ref. [5].…”

Section: Methodsmentioning

confidence: 99%

Surface Structure Determination with ARPEFS

Barton

Robey

Bahr

et al. 1985

The Structure of Surfaces

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“…If we consider for SiO2 a condition presented in Ref. [15], we can estimate that an effect of curvature is smaller than 10% for energies above 60 eV.…”

Section: Theorymentioning

confidence: 99%

“…Our approach is based (741) on the following approximations: muffin-tin potential . and curved waves single scattering [5,14,15], it enables us to obtain results for energy region extended from 30 eV above the absorption edge.…”

Section: Introductionmentioning

confidence: 99%

Oxygen and Silicon K-EXAFS in SiO₂

Nietubyć

1994

Acta Phys. Pol. A

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The aim of this work was to calculate EXAFS (extended X-ray absorption fine structure) profile of the constituent ełements for SiO 2 in fl-quartz and in its amorphous form within a single scattering curved waves approximation. This method extends the EXAFS analysis to lower energies than the plane wave approximation. We have used wave functions for free ions and Pendry's procedure for central atom phase shifts calculation. Our results for Si K-EXAFS were consistent with experiment, whereas a significant deviatioń from experimental results for O K-EXAFS was observed. Similar EXAFS profiles for ,-quartz and amorphous SiO 2 were obtained from calculations.

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“…The combination of high angular momenta in atomic scattering and multiple scattering, as well as high energies, prevents the use of standard LEED formalisms. Therefore, the method called "near-field expansion in clusters" (NFEC) was developed, which is based on the "Taylor series, magnetic quantum number expansion" (TS-MQNE), first used to describe angle-resolved photoelectron emission fine structure (ARPEFS) [21,22]. The NFEC method is described in reference [16] while its application to forward focusing of Auger electrons is explored in references [7], [8].…”

Section: Theorymentioning

confidence: 99%

Forward focusing of Auger and Kikuchi electrons for surface structure determination: Ni(100) and oxidized Mg(0001)

Cronacher¹,

Heinz²,

Müller³

et al. 1989

Surface Science Letters

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Angular profiles of "Kikuchi" and Auger electrons were measured and interpreted for a clean Ni(100) surface and a slightly oxidized Mg(OOOI) surface. Theoretical analysis of the data using forward focusing of the medium-energy electrons (500-1500 e V) shows that both Kikuchi and Auger electrons can be well represented as s-waves emitted from atomic sites. The Auger electron data are used to analyze the structure of slightly oxidized Mg(OOOI), yielding oxygen atom positions in the octahedral interstitial sites in the first two interlayer spacings of the metal.

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Curved-wave-front corrections for photoelectron scattering

Cited by 96 publications

References 16 publications

Surface Structure Determination with ARPEFS

Surface Structure Determination with ARPEFS

Oxygen and Silicon K-EXAFS in SiO₂

Forward focusing of Auger and Kikuchi electrons for surface structure determination: Ni(100) and oxidized Mg(0001)

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Curved-wave-front corrections for photoelectron scattering

Cited by 96 publications

References 16 publications

Surface Structure Determination with ARPEFS

Surface Structure Determination with ARPEFS

Oxygen and Silicon K-EXAFS in SiO2

Forward focusing of Auger and Kikuchi electrons for surface structure determination: Ni(100) and oxidized Mg(0001)

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Product

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Oxygen and Silicon K-EXAFS in SiO₂